• Microelectronics
  • Vol. 52, Issue 1, 115 (2022)
YIN Xiangkun1, LIU Jingting2, and WANG Fengjuan2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.210223 Cite this Article
    YIN Xiangkun, LIU Jingting, WANG Fengjuan. COMSOL-Based Multi-Physical Field Coupling Characteristics for TSV Inductors[J]. Microelectronics, 2022, 52(1): 115 Copy Citation Text show less

    Abstract

    Based on through-silicon via (TSV) technology, a spiral inductor for 3D integrated circuits was proposed. In the practical application, the electric field, temperature field and force field of the TSV inductor were coupled with each other, which would eventually degrade the actual electrical performance. Considering the effects of P- and N-type substrates, the effects of multi-physics coupling on TSV-based 3D spiral inductor were researched using COMSOL software. The results showed that the impact of multi-physical field coupling was much significant in P-type silicon substrate, and the variations of the inductance and quality factor reached as much as 14.13% and 5.91%, respectively.
    YIN Xiangkun, LIU Jingting, WANG Fengjuan. COMSOL-Based Multi-Physical Field Coupling Characteristics for TSV Inductors[J]. Microelectronics, 2022, 52(1): 115
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