• Microelectronics
  • Vol. 51, Issue 3, 303 (2021)
XIONG Li and HUANG Lu
Author Affiliations
  • [in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.200392 Cite this Article
    XIONG Li, HUANG Lu. A New Charge Pump Regulation Technology for Flash Memory[J]. Microelectronics, 2021, 51(3): 303 Copy Citation Text show less

    Abstract

    The charge pump is an important circuit module for programming, erasing and reading in flashs and EEROMs. The pump regulator circuit is used to output stable voltages and currents. In this paper, a pump regulator circuit was proposed to solve the problem of larger ripple in the traditional circuit at light load, which was difficult to be applied to multi-bit flash. The characteristics of the circuit were that a clock amplitude adjustment module was added to traditional frequency adjustment circuit. So the pump worked at a smaller clock amplitude under light load, and at a maximum amplitude under heavy load. A latch controller prevented the clock amplitude from changing repeatedly. Based on XMC 65 nm FG process, the circuit was simulated by Cadence Spectre. The results showed that the ripple voltage was about 40 mV under both light and heavy load, which effectively reduced the ripple under light load conditions.