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Journals >Journal of Semiconductors >Volume 42 >Issue 1 >Page 014101 > Article

Journal of Semiconductors
Vol. 42, Issue 1, 014101 (2021)

Study of short-term synaptic plasticity in Ion-Gel gated graphene electric-double-layer synaptic transistors

Chenrong Gong, Lin Chen, Weihua Liu, and Guohe Zhang

DOI: 10.1088/1674-4926/42/1/014101 Cite this Article

Chenrong Gong, Lin Chen, Weihua Liu, Guohe Zhang. Study of short-term synaptic plasticity in Ion-Gel gated graphene electric-double-layer synaptic transistors[J]. Journal of Semiconductors, 2021, 42(1): 014101 Copy Citation Text

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References

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Chenrong Gong, Lin Chen, Weihua Liu, Guohe Zhang. Study of short-term synaptic plasticity in Ion-Gel gated graphene electric-double-layer synaptic transistors[J]. Journal of Semiconductors, 2021, 42(1): 014101

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