[1] N Adarsh, N B Thirumaleshwara, R Saravanan et al. Effect of self-heating on electrical characteristics of AlGaN/GaN HEMT on Si (111) substrate. Advances, 7, 085015(2017).
[2]
[3] J J Zhu, X H Ma, B Hou et al. Investigation of trap states in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis. Advances, 4, 037108(2014).
[4]
[5] F Medjdoub, M Zegaoui, N Rolland et al. Demonstration of low leakage current and high polarization in ultrathin AlN/GaN high electron mobility transistors grown on silicon substrate. Appl Phys Lett, 98, 223502(2011).
[6] F Medjdoub, J Derluyn, K Cheng et al. Low on resistance high-breakdown normally off AlN/GaN/AlGaN DHFET on Si substrate. IEEE Electron Device Lett, 31, 111(2010).
[7] T Zimmermann, D Deen, Y Cao et al. AlN/GaN insulated-gate HEMTs with 2.3 A/mm output current and 480 mS/mm transconductance. IEEE Electron Device Lett, 29, 661(2008).
[8] Y Tang. Ultrahigh-speed GaN high-electron-mobility transistors with
[9] M Huque, S Eliza, T Rahman et al. Temperature dependent analytical model for current-voltage characteristics of AlGaN/GaN power HEMT. Solid-State Electron, 53, 341(2009).
[10] H Huq, S Islam. AlGaN/GaN self-aligned MODFET with metal oxide gate for millimeter wave application. Microelectron J, 37, 579(2006).
[11] Y Chang, Y Zhang, Y Zhang et al. A thermal model for static current characteristics of AlGaN/GaN high electron mobility transistors including self-heating effect. J Appl Phys, 99, 044501(2006).
[12] Y Chang, K Tong, C Surya. Numerical simulation of current/voltage characteristics of AlGaN/GaNHEMTs at high temperatures. Semicond Sci Technol, 20, 188(2005).
[13] S Vitanov, V Palankovski, S Maroldt et al. High-temperature modeling of AlGaN/GaN HEMTs. Solid-State Electron, 54, 1105(2010).
[14]
[15] J G Fossum, R P Mertens, D S Lee et al. Carrier recombination and lifetime in highly doped silicon. Solid-State Electron, 26, 569(1983).
[16] O Ambacher, B Foutz, J Smart et al. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures. J Appl Phys, 85, 3222(1999).
[17] K Rashmi, S Abhinav et al. An accurate charge control model for spontaneous and piezoelectric polarization dependent two-dimensional electron gas sheet charge density of lattice-mismatched AlGaN/GaN HEMTs. Solid-State Electron, 46, 621(2002).
[18]
[19] J D Albrecht, R P Wang, P P Ruden et al. Electron transport characteristics of GaN for high temperature device modeling. J Appl Phys, 83, 4777(1998).
[20] H Kim, R M Thompson, V Tilak et al. Effects of SiN passivation and high-electric field on AlGaN/GaN HFET degradation. IEEE Electron Device Lett, 24, 421(2003).
[21]
[22] J P Ibbetson, P T Fini, K D Ness et al. Polarisation effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors. Appl Phys Lett, 77, 250(2000).
[23] X G He, D G Zhao, D S Jiang. Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression. Chin Phys B, 24, 067301(2015).