• Infrared and Laser Engineering
  • Vol. 50, Issue 11, 20210073 (2021)
Jiasheng Cao1、2、3, Tao Li1、2, Hongzhen Wang1、2、3, Chunlei Yu1、2, Bo Yang1、2, Yingjie Ma1、2, Xiumei Shao1、2, Xue Li1、2, and Haimei Gong1、2
Author Affiliations
  • 1State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • 2Key Laboratory of Infrared Imaging Materials and Detectors, Chinese Academy of Sciences, Shanghai 200083, China
  • 3University of the Chinese Academy of Sciences, Beijing 100049, China
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    DOI: 10.3788/IRLA20210073 Cite this Article
    Jiasheng Cao, Tao Li, Hongzhen Wang, Chunlei Yu, Bo Yang, Yingjie Ma, Xiumei Shao, Xue Li, Haimei Gong. Study on InP/InGaAs hetero-structure detector with unintentionally doping absorption layer[J]. Infrared and Laser Engineering, 2021, 50(11): 20210073 Copy Citation Text show less
    References

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    [2] Yongfu Li, Hengjing Tang, Tao Li, et al. Zn diffusion mechanism in InP/InxGa1-xAs heterostructures. Infrared and Laser Engineering, 38, 951-956(2009).

    [3] Xue Li, Xiumei Shao, Tao Li, et al. Research progress of shortwave infrared InGaAs focal plane detector. Infrared and Laser Engineering, 49, 0103006(2020).

    [4] Honghai Deng, Peng Wei, Yaoming Zhu, et al. Effect of annealing on Zn diffusion and its application in InGaAs detector. Infrared and Laser Engineering, 41, 279-283(2012).

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    Jiasheng Cao, Tao Li, Hongzhen Wang, Chunlei Yu, Bo Yang, Yingjie Ma, Xiumei Shao, Xue Li, Haimei Gong. Study on InP/InGaAs hetero-structure detector with unintentionally doping absorption layer[J]. Infrared and Laser Engineering, 2021, 50(11): 20210073
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