[1] Honghai Deng, Bo Yang, Haibao Shao, et al. Positive irradiation extended wavelength In0.8Ga0.2As infrared focal plane detector. Infrared and Laser Engineering, 47, 0504004(2018).
[2] Yongfu Li, Hengjing Tang, Tao Li, et al. Zn diffusion mechanism in InP/InxGa1-xAs heterostructures. Infrared and Laser Engineering, 38, 951-956(2009).
[3] Xue Li, Xiumei Shao, Tao Li, et al. Research progress of shortwave infrared InGaAs focal plane detector. Infrared and Laser Engineering, 49, 0103006(2020).
[4] Honghai Deng, Peng Wei, Yaoming Zhu, et al. Effect of annealing on Zn diffusion and its application in InGaAs detector. Infrared and Laser Engineering, 41, 279-283(2012).
[5] Chunlei Yu, Xue Li, Xiumei Shao, et al. Noise characteristics of shortwave infrared InGaAs focal plane. Journal of Infrared and Millimeter Wave, 38, 528-534(2019).
[6] G H Bun, H J Chung, J H Yi, et al. Electrical characterization of an operating Si pn-junction diode with scanning capacitance microscopy and Kelvin probe force microscopy. J Appl Phys, 90, 443-448(2001).
[7] S E Park, V Nauven, J J Kopanski, et al. Comparison of scanning capacitance microscopy and scanning Kelvin probe microscopy in determining two-dimensional doping profiles of Si homostructures. J Vac Sci Technol B, 24, 404-407(2006).
[8] G H Olsen, M Ettenberg. Universal stain/etchant for interfaces in Ⅲ-V compounds. Journal of Applied Physics, 45, 5112-5114(1974).
[9] Y Lv, N Wang, C Zhuang, et al. The uniformity of InGaAs in InP/InGaAs/InP by microwave photoconductivity decay (μ-PCD) carrier lifetime measurement. Semiconductor Science & Technology, 21, 771-774(2006).
[10] R K Ahrenkiel, R Ellingson, S Johnston, et al. Recombination lifetime of In0.53Ga0.47As as a function of doping density. Applied Physics Letters, 72, 3470-3472(1998).
[11] E Zielinski, H Schweizer, K Streubel, et al. Excitonic transitions and exciton damping processes in InGaAs/InP. Journal of Applied Physics, 59, 2196-2204(1998).
[12] E Wintner, E P Ippen. Nonlinear carrier dynamics in Ga
[13] Wichman A R, Dewames R E, Bellotti E. Threedimensional numerical simulation of planar P+n heterojunction In0.53Ga0.47As photodiodes in dense arrays part I: dark current dependence on device geometry[C]Infrared Technology & Applications XL, 2014.
[14] M C Chen. Photoconductivity lifetime measurements on HgCdTe using a contactless microwave technique. J Appl Phys, 62, 946-947(1988).
[15] M Ichimura, M Hirano, A Tada, et al. Characterization of Si wafers by μ-PCD with surface electric field. Materials Science & Engineering B, 73, 230-234(2000).
[16] D Sontag, G Hahn, P Geiger, et al. Two-dimensional resolution of minority carrier diffusion constants in different silicon materials. Solar Energy Materials & Solar Cells, 72, 533-539(2002).
[17] Yanqiu LV, Hui Qiao, Bing Han, et al. LBIC technology to study the crosstalk and light sensitive region of InGaAs line detector. Infrared and Laser Engineering, 36, 708-710(2007).
[18] V K S Ong, D Wu. Determination of diffusion length from within a confined region with the use of EBIC. Electron Devices IEEE Transactions on, 48, 332-337(2001).
[19] Ming Shi, Xiumei Shao, Hengjing Tang, et al. Inductively coupled plasma chemical vapor deposition silicon nitride for passivation of In0.83Ga0.17 As photodiodes. Infrared Physics & Technology, 67, 197-201(2014).
[20] Gopal Vishnu, V Gopal, S Gupta, et al. Temperature dependence of ohmic shunt resistance in mercury cadmium telluride junction diode. Infrared Physics & Technology, 45, 265-271(2004).