Jiasheng Cao, Tao Li, Hongzhen Wang, Chunlei Yu, Bo Yang, Yingjie Ma, Xiumei Shao, Xue Li, Haimei Gong. Study on InP/InGaAs hetero-structure detector with unintentionally doping absorption layer[J]. Infrared and Laser Engineering, 2021, 50(11): 20210073
- Infrared and Laser Engineering
- Vol. 50, Issue 11, 20210073 (2021)
Fig. 1. Scheme illustration of the epitaxial material junction and the cross-section profile of the photodetector
Fig. 2. p-n junction depth of epitaxial layer by SCM. (a) 520 ℃，9 min; (b) 530 ℃，9 min; (c) 530 ℃，10 min
Fig. 3. Under different SRH lifetimes，(a) relationship between minority carrier lifetime and doping concentration of absorption layer，(b) relationship between minority carrier diffusion length and doping concentration of absorption layer
Fig. 4. Decay curve of μ-PCD signal for the sample
Fig. 5. Photograph of scan signal by LBIC. (a) 15 μm pitch; (b) 30 μm pitch
Fig. 6. Response profile of scan signal by LBIC. (a) 15 μm pitch; (b) 30 μm pitch
Fig. 7. Induced signal decay from the edge of the junction and its exponential fit. (a) 15 μm pitch; (b) 30 μm pitch
Fig. 8. Dark current density curves ranging from 260 K to 300 K for the detector
Fig. 9. Relationship between 1 000/T and ln(J d ) of the detector at −0.1 V
Fig. 10. Dark current density curves measured and component of dark current fitted at 300 K for the detector
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