Researching | 75 GHz germanium waveguide photodetector with 64 Gbps data rates utilizing an inductive-gain-peaking technique

Journals >Journal of Semiconductors >Volume 44 >Issue 1 >Page 012301 > Article

Journal of Semiconductors
Vol. 44, Issue 1, 012301 (2023)

75 GHz germanium waveguide photodetector with 64 Gbps data rates utilizing an inductive-gain-peaking technique

Xiuli Li^1、2, Yupeng Zhu^1、2, Zhi Liu^1、2、*, Linzhi Peng^1、2, Xiangquan Liu^1、2, Chaoqun Niu^1、2, Jun Zheng^1、2, Yuhua Zuo^1、2, and Buwen Cheng^1、2

Author Affiliations

¹State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

show less

DOI: 10.1088/1674-4926/44/1/012301 Cite this Article

Xiuli Li, Yupeng Zhu, Zhi Liu, Linzhi Peng, Xiangquan Liu, Chaoqun Niu, Jun Zheng, Yuhua Zuo, Buwen Cheng. 75 GHz germanium waveguide photodetector with 64 Gbps data rates utilizing an inductive-gain-peaking technique[J]. Journal of Semiconductors, 2023, 44(1): 012301 Copy Citation Text

show less

References

[1] D Marpaung, J P Yao, J Capmany. Integrated microwave photonics. Nat Photonics, 13, 80(2019).

[2] D Zhou, C L Sun, Y X Lai et al. Integrated silicon multifunctional mode-division multiplexing system. Opt Express, 27, 10798(2019).

[3] Y C Shi, Y Zhang, Y T Wan et al. Silicon photonics for high-capacity data communications. Photonics Res, 10, A106(2022).

[4] Y Salamin, P Ma, B Baeuerle et al. 100 GHz plasmonic photodetector. ACS Photonics, 5, 3291(2018).

[5] Z Liu, F Yang, W Z Wu et al. 48 GHz high-performance Ge-on-SOI photodetector with zero-bias 40 Gbps grown by selective epitaxial growth. J Lightwave Technol, 35, 5306(2017).

[6] L Vivien, D Marris-Morini, J-M Fédéli et al. Metal-semiconductor-metal Ge photodetectors integrated in silicon waveguides. Appl Phy Lett, 92, 151114(2008).

[7] C T DeRose, D C Trotter, W A Zortman et al. Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current. Opt Express, 19, 24897(2011).

[8] Y P Zhu, Z Liu, C Q Niu et al. High-speed and high-power germanium photodetector based on a trapezoidal absorber. Opt Lett, 47, 3263(2022).

[9] M Cea, D Orden, J Fini et al. High-speed, zero-biased silicon-germanium photodetector. APL Photonics, 6, 041302(2021).

[10] H Chen, P Verheyen, P De Heyn et al. –1 V bias 67 GHz bandwidth Si-contacted germanium waveguide p-i-n photodetector for optical links at 56 Gbps and beyond. Opt Express, 24, 4622(2016).

[11] S Lischke, D Knoll, C Mai et al. High bandwidth, high responsivity waveguide-coupled germanium p-i-n photodiode. Opt Express, 23, 27213(2015).

[12] R Going, T J Seok, J Loo et al. Germanium wrap-around photodetectors on silicon photonics. Opt Express, 23, 11975(2015).

[13] S Lischke, A Peczek, J S Morgan et al. Ultra-fast germanium photodiode with 3-dB bandwidth of 265 GHz. Nat Photonics, 15, 925(2021).

[14] X Hu, D Y Wu, H G Zhang et al. High-speed and high-power germanium photodetector with a lateral silicon nitride waveguide. Photonics Res, 9, 749(2021).

[15] T Yin, R Cohen, M M Morse et al. 31 GHz Ge n-i-p waveguide photodetectors on silicon-on-insulator substrate. Opt Express, 15, 13965(2007).

[16] S R Liao, N N Feng, D Z Feng et al. 36 GHz submicron silicon waveguide germanium photodetector. Opt Express, 19, 10967(2011).

[17] L Vivien, J Osmond, J M Fédéli et al. 42 GHz p. i. n germanium photodetector integrated in a silicon-on-insulator waveguide. Opt Express, 17, 6252(2009).

[18] M Gould, T Baehr-Jones, R Ding et al. Bandwidth enhancement of waveguide-coupled photodetectors with inductive gain peaking. Opt Express, 20, 7101(2012).

[19] A Novack, M Gould, Y S Yang et al. Germanium photodetector with 60 GHz bandwidth using inductive gain peaking. Opt Express, 21, 28387(2013).

[20] D Y Wu, X Hu, W Z Li et al. 62 GHz germanium photodetector with inductive gain peaking electrode for photonic receiving beyond 100 Gbaud. J Semicond, 42, 020502(2021).

[21] Y Shi, D Zhou, Y Yu et al. 80 GHz germanium waveguide photodiode enabled by parasitic parameter engineering. Photonics Res, 9, 605(2021).

[22] G Y Chen, Y Yu, S P Deng et al. Bandwidth improvement for germanium photodetector using wire bonding technology. Opt Express, 23, 25700(2015).

[24] W Z Li, H G Zhang, X Hu et al. 100 Gbit/s co-designed optical receiver with hybrid integration. Opt Express, 29, 14304(2021).

Figures&Tables (10)

References (23)

Copy Citation Text

Xiuli Li, Yupeng Zhu, Zhi Liu, Linzhi Peng, Xiangquan Liu, Chaoqun Niu, Jun Zheng, Yuhua Zuo, Buwen Cheng. 75 GHz germanium waveguide photodetector with 64 Gbps data rates utilizing an inductive-gain-peaking technique[J]. Journal of Semiconductors, 2023, 44(1): 012301

Download Citation

Save the article for my favorites

Paper Information

Recommended Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology

Set citation alerts for the article

Please enter your email address