Fig. 1. (Color online) Equivalent circuit of Ge waveguide photodetector (a) without and (b) with integrated inductor.

Fig. 2. (Color online) (a) Cross section of the Ge waveguide photodetector. (b) Microscopic image of the device. (c) Microscopic image of the standalone inductors (L₁, L₂, L₃, L₄, and L₅).

Fig. 3. (Color online) (a) Equivalent circuit of the extracted parameters of inductors. (b–f) Fitting curves of the standalone inductors (L₁, L₂, L₃, L₄, and L₅).

Fig. 4. (Color online) (a) Typical current–voltage characteristics of the Ge waveguide photodetector with and without incident light. (b) Dark current characteristics of Ge waveguide photodetectors without and with integrated inductors. Inset shows the dark current and responsivity of these photodetectors.

Fig. 5. (Color online) Frequency responses of Ge waveguide photodetectors with and without integrated inductors.

Fig. 6. (Color online) (a) Simulated frequency response of the photodetector without and with integrated inductors. (b) Simulated 3-dB bandwidth and peak values.

Fig. 7. (Color online) Eye diagrams of Ge waveguide photodetectors with and without integrated inductors at 50, 55, 60, and 64 Gbps.

Fig. 8. (Color online) Measured signal-to-noise ratio (SNR) and eye amplitude of the eye diagram at 50 and 64 Gbps.

Table 0. Parameters of the inductors (L₁, L₂, L₃, L₄ and L₅).

Table 0. Performance summary of high-speed silicon-based Ge photodetectors with integrated inductances.