Fig. 1. (Color online) (a) The P−E hysteresis curves of HZO capacitor at its pristine state and after 10³ cycles. The inside illustration is a schematic diagram of HZO capacitor devices during electrical measurements. (b) The GI-XRD diffractogram of HZO thin film at an incident angle of 0.5°. (c) A cross-sectional TEM image of the HZO capacitor. (d) The fast Fourier transform pattern from the HR-TEM image in the yellow box in (c).

Fig. 2. (Color online) (a) The J−E curves of TiN/HZO/TiN capacitor ranging from 300 to 30 K. (b) The fitting results of the leakage current at temperatures from 300 to 130 K by the P−F emission at 300, 200, and 130 K. (c) The fitting plot of the leakage current at 30 K by the F−N tunneling. (d) The typical P−E curves of HZO capacitors at temperatures from 300 to 30 K under 3.0 MV/cm. (e) The statistical results of ±P_r values at temperatures from 300 to 30 K. The inset shows the typical PUND curves at various temperatures under 3.0 MV/cm. (f) ε_r−E curves of HZO capacitors in the temperature ranging from 300 to 30 K.

Fig. 3. (Color online) The PUND curves of HZO capacitors at different temperatures under (a) 2.5 MV/cm, (b) 2.0 MV/cm, and (c) 1.5 MV/cm. (d) The averaged E_c values at different temperatures. (e) The 2P_r values at different temperatures. (f) The relationship between 2P_r values with temperature in previous reports and this work. The 2P_r values in this work are from PUND data under 3.0 and 2.5 MV/cm. The letter W and P stand for woken-up state and pristine state, respectively. The applied electric fields are indicated on the right.

Fig. 4. (Color online) Endurance characteristics of HZO capacitors under 2.5 MV/cm at 300 and 30 K.