Researching | Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf0.5Zr0.5O2 thin films by thermal atomic layer deposition

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Journal of Semiconductors
Vol. 45, Issue 3, 032301 (2024)

Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf_0.5Zr_0.5O₂ thin films by thermal atomic layer deposition

Shuyu Wu^1、4, Rongrong Cao³, Hao Jiang^2、*, Yu Li², Xumeng Zhang², Yang Yang¹, Yan Wang¹, Yingfen Wei^2、**, and Qi Liu²

Author Affiliations

¹State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

²Frontier institute of Chip and System, Fudan University, Shanghai 200433, China

³College of Electronic Science and Technology, National University of Defense Technology, Changsha 410073, China

⁴University of Chinese Academy of Sciences, Beijing 100049, China

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DOI: 10.1088/1674-4926/45/3/032301 Cite this Article

Shuyu Wu, Rongrong Cao, Hao Jiang, Yu Li, Xumeng Zhang, Yang Yang, Yan Wang, Yingfen Wei, Qi Liu. Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf_0.5Zr_0.5O₂ thin films by thermal atomic layer deposition[J]. Journal of Semiconductors, 2024, 45(3): 032301 Copy Citation Text

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References

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[2] S S Cheema, D Kwon, N Shanker et al. Enhanced ferroelectricity in ultrathin films grown directly on silicon. Nature, 580, 478(2020).

[3] W Banerjee, A Kashir, S Kamba. Hafnium oxide (HfO2)–A multifunctional oxide: A review on the prospect and challenges of hafnium oxide in resistive switching and ferroelectric memories. Small, 18, 2107575(2022).

[4] A I Khan, A Keshavarzi, S Datta. The future of ferroelectric field-effect transistor technology. Nat Electron, 3, 588(2020).

[5] R R Cao, X M Zhang, S Liu et al. Compact artificial neuron based on anti-ferroelectric transistor. Nat Commun, 13, 7018(2022).

[7] J Müller, T S Böscke, U Schröder et al. Ferroelectricity in simple binary ZrO2 and HfO2. Nano Lett, 12, 4318(2012).

[8] M D Henry, S W Smith, R M Lewis et al. Stabilization of ferroelectric phase of Hf0.58Zr0.42O2 on NbN at 4 K. Appl Phys Lett, 114, 092903(2019).

[9] J Hur, Y C Luo, Z Wang et al. Characterizing ferroelectric properties of Hf0.5Zr0.5O2 from deep-cryogenic temperature (4 K) to 400 K. IEEE J Explor Solid State Comput Devices Circuits, 7, 168(2021).

[10] M H Park, C C Chung, T Schenk et al. Origin of temperature-dependent ferroelectricity in Si-doped HfO2. Adv Elect Materials, 4, 1700489(2018).

[11] D Y Zhou, Y Guan, M M Vopson et al. Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films. Acta Mater, 99, 240(2015).

[12] D Wang, J L Wang, Q A Li et al. Stable ferroelectric properties of Hf0.5Zr0.5O2 thin films within a broad working temperature range. Jpn J Appl Phys, 58, 090910(2019).

[13] M Pešić, F P G Fengler, L Larcher et al. Physical mechanisms behind the field-cycling behavior of HfO2-based ferroelectric capacitors. Adv Funct Materials, 26, 4601(2016).

[14] J W Adkins, I Fina, F Sánchez et al. Thermal evolution of ferroelectric behavior in epitaxial Hf0.5Zr0.5O2. Appl Phys Lett, 117, 142902(2020).

[15] H Liu, Q Y Yang, C J Jin et al. Mobile-ionic FETs with ultra-scaled amorphous dielectric achieving ferroelectric behaviors and sub-kT/q swing with temperature down to 77 K. Sci China Inf Sci(2023).

[16] P F Jiang, Q Luo, X X Xu et al. Wake-up effect in HfO2-based ferroelectric films. Adv Elect Materials, 7, 2000728(2021).

[17] J P B Silva, K C Sekhar, R F Negrea et al. Progress and perspective on different strategies to achieve wake-up-free ferroelectric hafnia and zirconia-based thin films. Appl Mater Today, 26, 101394(2022).

[18] M H Park, H J Kim, Y J Kim et al. Study on the internal field and conduction mechanism of atomic layer deposited ferroelectric Hf0.5Zr0.5O2 thin films. J Mater Chem C, 3, 6291(2015).

[19] H Jiang, M A Bhuiyan, Z Liu et al. A study of BEOL processed Hf0.5Zr0.5O2- based ferroelectric capacitors and their potential for automotive applications(2020).

[20] M H Park, H J Kim, Y J Kim et al. Giant negative electrocaloric effects of Hf0.5Zr0.5O2 thin films. Adv Mater, 28, 7956(2016).

[21] K Y Hsiang, J Y Lee, Z F Lou et al. Cryogenic endurance of anti-ferroelectric and ferroelectric Hf1-xZrxO2 for quantum computing applications(2023).

[22] J Chen, C Jin, X Yu et al. Impact of oxygen vacancy on ferroelectric characteristics and its implication for wake-up and fatigue of HfO2-based thin films. IEEE Trans Electron Devices, 69, 5297(2022).

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Shuyu Wu, Rongrong Cao, Hao Jiang, Yu Li, Xumeng Zhang, Yang Yang, Yan Wang, Yingfen Wei, Qi Liu. Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf_0.5Zr_0.5O₂ thin films by thermal atomic layer deposition[J]. Journal of Semiconductors, 2024, 45(3): 032301

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