• Photonics Research
  • Vol. 6, Issue 5, B1 (2018)
Andres D. Neira, Gregory A. Wurtz*, and Anatoly V. Zayats
Author Affiliations
  • Department of Physics, King’s College London, Strand, London WC2R 2LS, UK
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    DOI: 10.1364/PRJ.6.0000B1 Cite this Article Set citation alerts
    Andres D. Neira, Gregory A. Wurtz, Anatoly V. Zayats. All-optical switching in silicon photonic waveguides with an epsilon-near-zero resonant cavity [Invited][J]. Photonics Research, 2018, 6(5): B1 Copy Citation Text show less

    Abstract

    Strong nonlinearity of plasmonic metamaterials can be designed near their effective plasma frequency in the epsilon-near-zero (ENZ) regime. We explore the realization of an all-optical modulator based on the Au nonlinearity using an ENZ cavity formed by a few Au nanorods inside a Si photonic waveguide. The resulting modulator has robust performance with a modulation depth of about 30 dB/μm and loss less than 0.8 dB for switching energies below 600 fJ. The modulator provides a double advantage of high mode transmission and strong nonlinearity enhancement in the few-nanorod-based design.
    ϵ=ϵ(ω,TL,Te)=ϵωp2(TL)ω[ω+iγintra(ω,TL,Te)],(1)

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    E=(1/2)CeTe2VENZ,(2)

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    Andres D. Neira, Gregory A. Wurtz, Anatoly V. Zayats. All-optical switching in silicon photonic waveguides with an epsilon-near-zero resonant cavity [Invited][J]. Photonics Research, 2018, 6(5): B1
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