• Journal of Semiconductors
  • Vol. 40, Issue 8, 081504 (2019)
Gu Bo1、2
Author Affiliations
  • 1Kavli Institute for Theoretical Sciences, and CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
  • 2Physical Science Laboratory, Huairou National Comprehensive Science Center, Beijing 101400, China
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    Magnetic semiconductors have been demonstrated to work at low temperatures, but not yet at room temperature for spin electronic applications. In contrast to the p-type diluted magnetic semiconductors, n-type diluted magnetic semiconductors are few. Using a combined method of the density function theory and quantum Monte Carlo simulation, we briefly discuss the recent progress to obtain diluted magnetic semiconductors with both p- and n-type carriers by choosing host semiconductors with a narrow band gap. In addition, the recent progress on two-dimensional intrinsic magnetic semiconductors with possible room temperature ferromangetism and quantum anomalous Hall effect are also discussed.
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    Bo Gu. High temperature magnetic semiconductors: narrow band gaps and two-dimensional systems[J]. Journal of Semiconductors, 2019, 40(8): 081504
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    Category: Reviews
    Received: Jun. 5, 2019
    Accepted: --
    Published Online: Sep. 18, 2021
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