Four-wave mixing in 1.3 μm epitaxial quantum dot lasers directly grown on silicon

Jianan Duan; Bozhang Dong; Weng W. Chow; Heming Huang; Shihao Ding; Songtao Liu; Justin C. Norman; John E. Bowers; Frédéric Grillot

doi:10.1364/PRJ.448082

Journals >Photonics Research >Volume 10 >Issue 5 >Page 1264 > Article

Photonics Research
Vol. 10, Issue 5, 1264 (2022)

Four-wave mixing in 1.3 μm epitaxial quantum dot lasers directly grown on silicon | Editors' Pick

Jianan Duan^{1、5、†,*}, Bozhang Dong^1、†, Weng W. Chow², Heming Huang¹, Shihao Ding¹, Songtao Liu^3、6, Justin C. Norman^3、7, John E. Bowers³, and Frédéric Grillot^1、4

Author Affiliations

¹LTCI, Télécom Paris, Institut Polytechnique de Paris, 91120 Palaiseau, France

²Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

³Institute for Energy Efficiency, University of California Santa Barbara, Santa Barbara, California 93106, USA

⁴Center for High Technology Materials, University of New-Mexico, Albuquerque, New Mexico 87106, USA

⁵Current address: State Key Laboratory on Tunable Laser Technology, School of Electronic and Information Engineering, Harbin Institute of Technology, Shenzhen 518055, China

⁶Current address: Ayar Labs, Santa Clara, California 95054, USA

⁷Current address: Quintessent, Inc., Goleta, California 93117, USA

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DOI: 10.1364/PRJ.448082 Cite this Article Set citation alerts

Jianan Duan, Bozhang Dong, Weng W. Chow, Heming Huang, Shihao Ding, Songtao Liu, Justin C. Norman, John E. Bowers, Frédéric Grillot. Four-wave mixing in 1.3 μm epitaxial quantum dot lasers directly grown on silicon[J]. Photonics Research, 2022, 10(5): 1264 Copy Citation Text

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Abstract

This work compares the four-wave mixing (FWM) effect in epitaxial quantum dot (QD) lasers grown on silicon with quantum well (QW) lasers. A comparison of theory and experiment results shows that the measured FWM coefficient is in good agreement with theoretical predictions. The gain in signal power is higher for p-doped QD lasers than for undoped lasers, despite the same FWM coefficient. Owing to the near-zero linewidth enhancement factor, QD lasers exhibit FWM coefficients and conversion efficiency that are more than one order of magnitude higher than those of QW lasers. Thus, this leads to self-mode locking in QD lasers. These findings are useful for developing on-chip sources for photonic integrated circuits on silicon.