Four-wave mixing in 1.3 μm epitaxial quantum dot lasers directly grown on silicon

Jianan Duan; Bozhang Dong; Weng W. Chow; Heming Huang; Shihao Ding; Songtao Liu; Justin C. Norman; John E. Bowers; Frédéric Grillot

doi:10.1364/PRJ.448082

Journals >Photonics Research >Volume 10 >Issue 5 >Page 1264 > Article

Photonics Research
Vol. 10, Issue 5, 1264 (2022)

Four-wave mixing in 1.3 μm epitaxial quantum dot lasers directly grown on silicon | Editors' Pick

Jianan Duan^{1、5、†,*}, Bozhang Dong^1、†, Weng W. Chow², Heming Huang¹, Shihao Ding¹, Songtao Liu^3、6, Justin C. Norman^3、7, John E. Bowers³, and Frédéric Grillot^1、4

Author Affiliations

¹LTCI, Télécom Paris, Institut Polytechnique de Paris, 91120 Palaiseau, France

²Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

³Institute for Energy Efficiency, University of California Santa Barbara, Santa Barbara, California 93106, USA

⁴Center for High Technology Materials, University of New-Mexico, Albuquerque, New Mexico 87106, USA

⁵Current address: State Key Laboratory on Tunable Laser Technology, School of Electronic and Information Engineering, Harbin Institute of Technology, Shenzhen 518055, China

⁶Current address: Ayar Labs, Santa Clara, California 95054, USA

⁷Current address: Quintessent, Inc., Goleta, California 93117, USA

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DOI: 10.1364/PRJ.448082 Cite this Article Set citation alerts

Jianan Duan, Bozhang Dong, Weng W. Chow, Heming Huang, Shihao Ding, Songtao Liu, Justin C. Norman, John E. Bowers, Frédéric Grillot. Four-wave mixing in 1.3 μm epitaxial quantum dot lasers directly grown on silicon[J]. Photonics Research, 2022, 10(5): 1264 Copy Citation Text

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