Effectiveness of inserting an InGaN interlayer to improve the performances of InGaN-based blue-violet laser diodes

Xiang Li; Degang Zhao

doi:10.3788/COL201614.062502

Journals >Chinese Optics Letters >Volume 14 >Issue 6 >Page 062502 > Article

Chinese Optics Letters
Vol. 14, Issue 6, 062502 (2016)

Effectiveness of inserting an InGaN interlayer to improve the performances of InGaN-based blue-violet laser diodes

Xiang Li and Degang Zhao^*

Author Affiliations

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

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DOI: 10.3788/COL201614.062502 Cite this Article Set citation alerts

Xiang Li, Degang Zhao. Effectiveness of inserting an InGaN interlayer to improve the performances of InGaN-based blue-violet laser diodes[J]. Chinese Optics Letters, 2016, 14(6): 062502 Copy Citation Text

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Xiang Li, Degang Zhao. Effectiveness of inserting an InGaN interlayer to improve the performances of InGaN-based blue-violet laser diodes[J]. Chinese Optics Letters, 2016, 14(6): 062502

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