[1] Y. Zhao, L. Chen, R. Aroca, N. Zhu, D. Ton, D. Inglis, C. R. Doerr. Silicon photonic based stacked die assembly toward 4 × 200-Gbit/s short-reach transmission. J. Lightwave Technol., 40, 1369-1374(2022).
[2] S. Fathololoumi, D. Hui, S. Jadhav, J. Chen, K. Nguyen, M. N. Sakib, Z. Li, H. Mahalingam, S. Amiralizadeh, N. N. Tang, H. Potluri, M. Montazeri, H. Frish, R. A. Defrees, C. Seibert, A. Krichevsky, J. K. Doylend, J. Heck, R. Venables, A. Dahal, A. Awujoola, A. Vardapetyan, G. Kaur, M. Cen, V. Kulkarni, S. S. Islam, R. L. Spreitzer, S. Garag, A. C. Alduino, R. K. Chiou, L. Kamyab, S. Gupta, B. Xie, R. S. Appleton, S. Hollingsworth, S. McCargar, Y. Akulova, K. M. Brown, R. Jones, D. Zhu, T. Liljeberg, L. Liao. 1.6 Tbps silicon photonics integrated circuit and 800 Gbps photonic engine for switch co-packaging demonstration. J. Lightwave Technol., 39, 1155-1161(2021).
[3] K. Hosseini, E. Kok, S. Y. Shumarayev, C.-P. Chiu, A. Sarkar, A. Toda, Y. Ke, A. Chan, D. Jeong, M. Zhang, S. Raman, T. Tran, K. A. Singh, P. Bhargava, C. Zhang, H. Lu, R. Mahajan, X. Li, N. Deshpande, C. O'Keeffe, T. T. Hoang, U. Krishnamoorthy, C. Sun, R. Meade, V. Stojanovic, M. Wade. 8 Tbps co-packaged FPGA and silicon photonics optical IO. Optical Fiber Communication Conference, Th4A.2(2021).
[4] L. Liao, S. Fathololoumi, D. Hui. High density silicon photonic integrated circuits and photonic engine for optical co-packaged Ethernet switch. European Conference on Optical Communication, Tu2C.1(2020).
[5] C. Doerr, L. Chen, T. Nielsen, R. Aroca, L. Chen, M. Banaee, S. Azemati, G. McBrien, S. Y. Park, J. Geyer, B. Guan. O, E, S, C, and L band silicon photonics coherent modulator/receiver. Optical Fiber Communication Conference, Th5C.4(2016).
[6] P. M. Seiler, K. Voigt, A. Peczek, G. Georgieva, S. Lischke, A. Malignaggi, L. Zimmermann. Multiband silicon photonic ePIC coherent receiver for 64 GBd QPSK. J. Lightwave Technol., 40, 3331-3337(2022).
[7] R. Emmerich, M. Ribeiro Sena, R. Elschner, C. Schmidt-Langhorst, I. Sackey, C. Schubert, R. Freund. Enabling S-C-L-band systems with standard C-band modulator and coherent receiver using coherent system identification and nonlinear predistortion. J. Lightwave Technol., 40, 1360-1368(2022).
[8] G. Rademacher, R. S. Luís, B. J. Puttnam, R. Ryf, S. van der Heide, T. A. Eriksson, N. K. Fontaine, H. Chen, R. Essiambre, Y. Awaji, H. Furukawa, N. Wada. 172 Tb/s C+L band transmission over 2040 km strongly coupled 3-Core fiber. Optical Fiber Communication Conference, Th4B.5(2020).
[9] J. Michel, J. Liu, L. C. Kimerling. High-performance Ge-on-Si photodetectors. Nat. Photonics, 4, 527-534(2010).
[10] D. Benedikovic, L. Virot, G. Aubin, J. Hartmann, F. Amar, X. L. Roux, C. Alonso-Ramos, E. Cassan, D. Marris-Morini, J. Fédéli, F. Boeuf, B. Szelag, L. Vivien. Silicon-germanium receivers for short-wave-infrared optoelectronics and communications. Nanophotonics, 10, 1059-1079(2020).
[11] X. Hu, D. Wu, D. Chen, L. Wang, X. Xiao, S. Yu. 180 Gbit/s Si3N4-waveguide coupled germanium photodetector with improved quantum efficiency. Opt. Lett., 46, 6019-6022(2021).
[12] X. Hu, D. Wu, H. Zhang, W. Li, D. Chen, L. Wang, X. Xiao, S. Yu. High-speed and high-power germanium photodetector with a lateral silicon nitride waveguide. Photon. Res., 9, 749-756(2021).
[13] H. Chen, M. Galili, P. Verheyen, P. De Heyn, G. Lepage, J. De Coster, S. Balakrishnan, P. Absil, L. Oxenlowe, J. Van Campenhout, G. Roelken. 100-Gbps RZ data reception in 67-GHz Si-contacted germanium waveguide p-i-n photodetectors. J. Lightwave Technol., 35, 722-726(2017).
[14] D. Chen, H. Zhang, M. Liu, X. Hu, Y. Zhang, D. Wu, P. Zhou, S. Chang, L. Wang, X. Xiao. 67 GHz Light-trapping-structure germanium photodetector supporting 240 Gb/s PAM-4 transmission. Photon. Res., 10, 2165-2171(2022).
[15] Y. Ishikawa, K. Wada, D. D. Cannan, J. Liu, H.-C. Luan, L. C. Kimerling. Strain-induced band gap shrinkage in Ge grown on Si substrate. Appl. Phys. Lett., 82, 2044-2046(2003).
[16] D. D. Cannon, J. Liu, Y. Ishikawa, K. Wada, D. T. Danielson, S. Jongthammanurak, J. Michel, L. C. Kimerling. Tensile strained epitaxial Ge films on Si (100) substrates with potential application in L-band telecommunications. Appl. Phys. Lett., 84, 906-908(2004).
[17] J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, J. Michel, L. C. Kimerling. Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications. Appl. Phys. Lett., 87, 011110(2005).
[18] J. Liu, J. Michel, W. Giziewicz, D. Pan, K. Wada, D. Cannon, L. C. Kimerling, J. Chen, F. O. Ilday, F. X. Kartner, J. Yasaitis. High performance, tensile strained Ge p-i-n photodetectors on a Si platform. Appl. Phys. Lett., 87, 103501(2005).
[19] R. Anthony, D. E. Hagan, D. Genuth-Okon, L. M. Maestro, I. F. Crowe, M. P. Halsall, A. P. Knights. Extended wavelength responsivity of a germanium photodetector integrated with a silicon waveguide exploiting the indirect transition. IEEE J. Sel. Top. Quantum Electron., 26, 3800107(2020).
[20] C. T. DeRose, D. C. Trotter, W. A. Zortman, A. L. Starbuck, M. Fisher, M. R. Watts, P. S. Davids. Ultra compact 45 GHz CMOS compatible germanium waveguide photodiode with low dark current. Opt. Express, 19, 24897-24904(2011).
[21] L. Vivien, A. Polzer, D. Marris-Morini, J. Osmond, J. M. Hartmann, P. Crozat, E. Cassan, C. Kopp, H. Zimmermann, J. M. Fédéli. Zero-bias 40 Gbit/s germanium waveguide photodetector on silicon. Opt. Express, 20, 1096-1101(2012).
[22] S. Lischke, D. Knoll, C. Mai, L. Zimmermann, A. Peczek, M. Kroh, A. Trusch, E. Krune, K. Voigt, A. Mai. High bandwidth, high responsivity waveguide-coupled germanium pin photodiode. Opt. Express, 23, 27213-27220(2015).
[23] X. Hu, D. Wu, H. Zhang, W. Li, D. Chen, L. Wang, X. Xiao, S. Yu. High-speed lateral PIN germanium photodetector with 4-directional light input. Opt. Express, 28, 38343-38354(2020).
[24] D. Y. Wu, X. Hu, W. Z. Li, D. G. Chen, L. Wang, X. Xiao. 62 GHz germanium photodetector with inductive gain peaking electrode for photonic receiving beyond 100 Gbaud. J. Semicond., 42, 020502(2021).
[25] D. Benedikovic, L. Virot, G. Aubin, F. Amar, B. Szelag, B. Karakus, J. M. Hartmann, C. Alonso-Ramos, X. L. Roux, P. Crozat, E. Cassan, D. Marris-Morini, C. Baudot, F. Boeuf, J. M. Fédéli, C. Kopp, L. Vivien. 25 Gbps low-voltage hetero-structured silicon-germanium waveguide pin photodetectors for monolithic on-chip nanophotonic architectures. Photon. Res., 7, 437-444(2019).
[26] D. Benedikovic, L. Virot, G. Aubin, J. M. Hartmann, F. Amar, B. Szelag, X. L. Roux, C. Alonso-Ramos, P. Crozat, É. Cassan, D. Marris-Morini, C. Baudot, F. Boeuf, J. M. Fédéli, C. Kopp, L. Vivien. Comprehensive study on chip-integrated germanium PIN photodetectors for energy-efficient silicon interconnects. IEEE J. Quantum Electron., 56, 8400409(2020).
[27] S. Lischke, A. Peczek, J. S. Morgan, K. Sun, D. Steckler, Y. Yamamoto, F. Korndörfer, C. Mai, S. Marschmeyer, M. Fraschke, A. Krüger. Ultra-fast germanium photodiode with 3 dB bandwidth of 265 GHz. Nat. Photonics, 15, 925-931(2021).
[28] X. Hu, D. Wu, Y. Liu, M. Liu, J. Liu, H. Zhang, Y. Zhang, D. Chen, L. Wang, X. Xiao, S. Yu. Single lane beyond 400 Gbit/s optical direct detection based on a sidewall-doped Ge-Si photodetector. European Conference on Optical Communication, Th2E.5(2022).
[29] X. Hu, H. Zhang, D. Wu, D. Chen, L. Wang, X. Xiao, S. Yu. High-performance germanium avalanche photodetector for 100 Gbit/s photonics receivers. Opt. Lett., 46, 3837-3840(2021).
[30] N. N. Feng, P. Dong, D. Zheng, S. Liao, H. Liang, R. Shafiiha, D. Feng, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, M. Asghari. Vertical pin germanium photodetector with high external responsivity integrated with large core Si waveguides. Opt. Express, 18, 96-101(2009).
[31] S. A. Srinivasan, M. Pantouvaki, S. Gupta, H. T. Chen, P. Verheyen, G. Lepage, G. Roelkens, K. Saraswat, D. Van Thourhout, P. Absil, J. Van Campenhout. 56 Gb/s germanium waveguide electro-absorption modulator. J. Lightwave Technol., 34, 419-424(2016).
[32] S. Sonoi, R. Katamawari, M. Shimokawa, K. Inaba, J. A. Piedra-Lorenzana, T. Hizawa, J. Fujikata, Y. Ishikawa. Direct bandgap control by narrowing the germanium strip structure on silicon for C+L band photonic devices. IEEE J. Quantum Electron., 58, 8400209(2022).
[33] X. Hu, J. Wang. Design of graphene-based polarization-insensitive optical modulator. Nanophotonics, 7, 651-658(2018).
[34] Y. Pan, M. He, M. Xu, Z. Lin, Y. Lin, W. Ke, J. Liu, Z. Lin, Y. Zhu, S. Gao, H. Li, X. Liu, C. Liu, S. Liu, X. Cai. Compact substrate-removed thin-film lithium niobate electro-optic modulator featuring polarization-insensitive operation. Opt. Lett., 47, 1818-1821(2022).
[35] K. Li, S. Liu, X. Ruan, D. J. Thomson, Y. Hong, F. Yang, L. Zhang, C. Lacava, F. Meng, W. Zhang, P. Petropoulos. Co-design of a differential transimpedance amplifier and balanced photodetector for a sub-pJ/bit silicon photonics receiver. Opt. Express, 28, 14038-14054(2020).
[36] S. Saeedi, S. Menezo, G. Pares, A. Emami. A 25 Gb/s 3D-integrated CMOS/silicon-photonic receiver for low-power high-sensitivity optical communication. J. Lightwave Technol., 34, 2924-2933(2016).
[37] D. Wu, D. Wang, D. Chen, J. Yan, Z. Dang, J. Feng, S. Chen, P. Feng, H. Zhang, Y. Fu, L. Wang, X. Hu, X. Xiao, S. Yu. Experimental demonstration of a 160 Gbit/s 3D-integrated silicon photonics receiver with 1.2-pJ/bit power consumption. Opt. Express, 31, 4129-4139(2023).
[38] G. Dziallas, A. Fatemi, A. Malignaggi, G. Kahmen. A 97-GHz 66-dBΩ SiGe BiCMOS low-noise transimpedance amplifier for optical receivers. IEEE Microw. Wireless Compon. Lett., 31, 1295-1298(2021).
[39] I. G. López, A. Awny, P. Rito, M. Ko, A. C. Ulusoy, D. Kissinger. 100 Gb/s differential linear TIAs with less than 10 pA/Hz in 130-nm SiGe:C BiCMOS. IEEE J. Solid-State Circuits, 53, 458-469(2018).
