408 Gbit/s PAM-8 sidewall-doped germanium–silicon photodetector

Xiao Hu; Dingyi Wu; Ye Liu; Daigao Chen; Lei Wang; Xi Xiao; Shaohua Yu

doi:10.1364/PRJ.488166

Journals >Photonics Research >Volume 11 >Issue 6 >Page 961 > Article

Photonics Research
Vol. 11, Issue 6, 961 (2023)

408 Gbit/s PAM-8 sidewall-doped germanium–silicon photodetector

Xiao Hu^1、2, Dingyi Wu², Ye Liu², Daigao Chen^1、2, Lei Wang^1、2、3, Xi Xiao^{1、2、3、*}, and Shaohua Yu^1、2、3

Author Affiliations

¹State Key Laboratory of Optical Communication Technologies and Networks, Wuhan Research Institute of Posts & Telecommunications (WRI), Wuhan 430074, China

²National Information Optoelectronics Innovation Center, Wuhan 430074, China

³Peng Cheng Laboratory, Shenzhen 518055, China

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DOI: 10.1364/PRJ.488166 Cite this Article Set citation alerts

Xiao Hu, Dingyi Wu, Ye Liu, Daigao Chen, Lei Wang, Xi Xiao, Shaohua Yu. 408 Gbit/s PAM-8 sidewall-doped germanium–silicon photodetector[J]. Photonics Research, 2023, 11(6): 961 Copy Citation Text

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Xiao Hu, Dingyi Wu, Ye Liu, Daigao Chen, Lei Wang, Xi Xiao, Shaohua Yu. 408 Gbit/s PAM-8 sidewall-doped germanium–silicon photodetector[J]. Photonics Research, 2023, 11(6): 961

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