[1] Hong J W, Jo W, Kim D C, et al. Nanoscale investigation of domain retention in preferentially oriented PbZr0.53Ti0.47O3 thin films on Pt/and on LaNiO3. Appl. Phys. Lett., 1999, 75: 3183-3185
[2] Ramesh R, Glichrist H, Sands T, et al. Ferroelectric La-Sr-Co-O/Pb-Zr-Ti-O/La-Sr-Co-O heterostructures on silicon via template growth.Appl. Phys. Lett., 1993, 63: 3592-3594
[3] Tseng T F, Liu K S, Wu T B. Effect of LaNiO3/Pt double layers on the characteristics of (PbxLa1-x)(ZryTi1-y)O3 thin films.Appl. Phys. Lett., 1996, 68: 2505-2507
[4] Satyalakshmi K M, Mallya R M. Epitaxial metallic LaNiO3 thin films grown by pulsed laser deposition.Appl. Phys. Lett., 1993, 62: 1233-1235
[5] Li Aidong, Ge ChuanZhen, Lü Peng. Preparation of perovskite conductive LaNiO3 films by metalorganic decomposition. Appl. Phys. Lett., 1996, 68: 1347-1349
[6] Sánchez F,Ferrater C, Guerrero C, et al. High-quality epitaxial LaNiO3 thin films on SrTiO3(100) and LaAlO3(100).Appl. Phys. A., 2000, 71: 59-64
[7] Sánchez R D, Causa M T, Caneiro A, et al. Metal-insulator transition in oxygen-deficient LaNiO3-x perovskites. Phys. Rev., 1996, B54: 16574-16578
[8] Meng X J, Cheng J G, Li B, et al. Preparation and properties of highly (111) oriented PZT thin films by a modified sol-gel technique. J. Cryst. Growth, 2000, 208: 541-544
[9] Meng X J, Sun J L, Ye H J, et al. Preparation of highly (100)oriented metallic LaNiO3 films on Si substrates by a modified metalorganic decomposition technique.Applied Surface Science, 2001, 171: 68-73