STUDY ON THE PREPARATION OF LaNiO3 THIN FILMS USING CHEMICAL SOLUTION DECOMPOSITION METHOD

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Journal of Infrared and Millimeter Waves >Volume 22 >Issue 4 >Page 269 > Article

Journal of Infrared and Millimeter Waves
Vol. 22, Issue 4, 269 (2003)

STUDY ON THE PREPARATION OF LaNiO3 THIN FILMS USING CHEMICAL SOLUTION DECOMPOSITION METHOD

[in Chinese]^1、2, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, and [in Chinese]²

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¹[in Chinese]

²[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. STUDY ON THE PREPARATION OF LaNiO3 THIN FILMS USING CHEMICAL SOLUTION DECOMPOSITION METHOD[J]. Journal of Infrared and Millimeter Waves, 2003, 22(4): 269 Copy Citation Text

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Abstract

LaNiO 3 thin films on Si(100) substrates were prepared using chemical solution decomposition method (CSD). The effects of annealing atmosphere (air and oxygen) on the crystallinity, grain size and resistivity of LaNiO 3 thin films, and the PZT films grown on the LNO layers were studied. The results showed that the value of the resistivity of the LaNiO 3 thin films annealed in oxygen is only half of that obtained in air. The conductive mechanism of LaNiO 3 thin films was discussed.

Keywords

CSD LaNiO 3 thin films resistivity annealing atmosphere CSD

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