Study of the morphology evolution of AlN grown on nano-patterned sapphire substrate

Zhuohui Wu; Jianchang Yan; Yanan Guo; Liang Zhang; Yi Lu; Xuecheng Wei; Junxi Wang; Jinmin Li

doi:10.1088/1674-4926/40/12/122803

[1] K Ding, V Avrutin, Ü Özgür et al. Status of growth of group III-nitride heterostructures for deep ultraviolet light-emitting diodes. Crystals, 7, 300(2017).

[2] A E Romanov, P Fini, J S Speck. Modeling the extended defect evolution in lateral epitaxial overgrowth of GaN: Subgrain stability. J Appl Phys, 93, 106(2003).

[3] M Imura, K Nakano, T Kitano et al. Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy. Appl Phys Lett, 89, 221901(2006).

[4] M Kim, T Fujita, S Fukahori et al. AlGaN-based deep ultraviolet light-emitting diodes fabricated on patterned sapphire substrates. Appl Phys Express, 4, 092102(2011).

[5] P Dong, J Yan, J Wang et al. 282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates. Appl Phys Lett, 102(2013).

[6] D Lee, J W Lee, J Jang et al. Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates. Appl Phys Lett, 110, 191103(2017).

[7] Z Chen, R S Qhalid Fareed, M Gaevski et al. Pulsed lateral epitaxial overgrowth of aluminum nitride on sapphire substrates. Appl Phys Lett, 89, 081905(2006).

[8] K Nakano, M Imura, G Narita et al. Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates. Phys Status Solidi A, 203, 1632(2006).

[9] M Imura, K Nakano, G Narita et al. Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers. J Cryst Growth, 298, 257(2007).

[10] J Mei, F A Ponce, R S Q Fareed et al. Dislocation generation at the coalescence of aluminum nitride lateral epitaxy on shallow-grooved sapphire substrates. Appl Phys Lett, 90, 221909(2007).

[11] R Jain, W Sun, J Yang et al. Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes. Appl Phys Lett, 93, 051113(2008).

[12] H Hirayama, S Fujikawa, J Norimatsu et al. Norimatsu J, et al. Fabrication of a low threading dislocation density ELO-AlN template for application to deep-UV LEDs. Phys Status Solidi C, 6, S356(2009).

[13] V Kueller, A Knauer, F Brunner et al. Growth of AlGaN and AlN on patterned AlN/sapphire templates. J Cryst Growth, 315, 200(2011).

[14] V Kueller, A Knauer, C Reich et al. Modulated epitaxial lateral overgrowth of AlN for efficient UV LEDs. IEEE Photonics Technol Lett, 24, 1603(2012).

[15] A Knauer, V Kueller, U Zeimer et al. AlGaN layer structures for deep UV emitters on laterally overgrown AlN/sapphire templates. Phys Status Solidi A, 210, 451(2013).

[16] V Kueller, A Knauer, U Zeimer et al. Controlled coalescence of MOVPE grown AlN during lateral overgrowth. J Cryst Growth, 368, 83(2013).

[17] U Zeimer, V Kueller, A Knauer et al. High quality AlGaN grown on ELO AlN/sapphire templates. J Cryst Growth, 377, 32(2013).

[18] P Dong, J C Yan, Y Zhang et al. AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency. J Cryst Growth, 395, 9(2014).

[19] L Zhang, F Xu, J Wang et al. High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography. Sci Rep, 6, 35934(2016).

[20] T Y Wang, C T Tasi, K Y Lin et al. Surface evolution and effect of V/III ratio modulation on etch-pit-density improvement of thin AlN templates on nano-patterned sapphire substrates by metalorganic chemical vapor deposition. Appl Surf Sci, 455, 1123(2018).

[21] S Hagedorn, A Knauer, A Mogilatenko et al. AlN growth on nano-patterned sapphire: A route for cost efficient pseudo substrates for deep UV LEDs. Phys Status Solidi A, 213, 3178(2016).

[22] M Conroy, V Z Zubialevich, H Li et al. Epitaxial lateral overgrowth of AlN on self-assembled patterned nanorods. J Mater Chem C, 3, 431(2015).

[23] B Beaumont, V Bousquet, P Vennegues et al. A two-step method for epitaxial lateral overgrowth of GaN. Phys Status Solidi A, 176, 567(1999).

[24] K Hiramatsu, K Nishiyama, M Onishi et al. Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO). J Cryst Growth, 221, 316(2000).

[25] K Horibuchi, N Kuwano, H Miyake et al. Microstructures of two-step facet-controlled ELO-GaN grown by MOVPE method — effect of mask geometry. J Cryst Growth, 237, 1070(2002).

[26] P Vennegues, B Beaumont, V Bousquet et al. Reduction mechanisms for defect densities in GaN using one- or two-step epitaxial lateral overgrowth methods. J Appl Phys, 87, 4175(2000).

[27] D Du, D J Srolovitz, M E Coltrin et al. Systematic prediction of kinetically limited crystal growth morphologies. Phys Rev Lett, 95, 155503(2005).

[28] C He, W Zhao, K Zhang et al. High-quality GaN epilayers achieved by facet-controlled epitaxial lateral overgrowth on sputtered AlN/PSS templates. ACS Appl Mater Interfaces, 9, 43386(2017).

[29] K Hiramatsu, K Nishiyama, A Motogaito et al. Recent progress in selective area growth and epitaxial lateral overgrowth of III-nitrides: Effects of reactor pressure in MOVPE growth. Phys Status Solidi A, 176, 535(1999).

[30] S Li, A Wang. GaN based nanorods for solid state lighting. J Appl Phys, 111, 071101(2012).

[31] L X Zhao, Z G Yu, B Sun et al. Progress and prospects of GaN-based LEDs using nanostructures. Chin Phys B, 24, 068506(2015).

[32] Y Tian, J Yan, Y Zhang et al. Formation and characteristics of AlGaN-based three-dimensional hexagonal nanopyramid semi-polar multiple quantum wells. Nanoscale, 8, 11012(2016).

[33] T Wunderer, M Feneberg, F Lipski et al. Three-dimensional GaN for semipolar light emitters. Phys Status Solidi B, 248, 549(2011).

[34] T Wunderer, J Wang, F Lipski et al. Semipolar GaInN/GaN light-emitting diodes grown on honeycomb patterned substrates. Phys Status Solidi C, 7, 2140(2010).