[1] K S Novoselov, A K Geim, S V Morozov, D Jiang, Y Zhang, S V Dubonos, I V Grigorieva, A A Firsov. Science, 306, 666(2004).
[2] S B Desai, S R Madhvapathy, A B Sachid, J P Llinas, Q Wang, G H Ahn, G Pitner, M J Kim, J Bokor, C Hu. Science, 354, 99(2016).
[3] K Novoselov, A Mishchenko, A Carvalho, A C Neto. Science, 353(2016).
[4] M Huang, S Li, Z Zhang, X Xiong, X Li, Y Wu. Nat. Nanotechnol, 12, 1148(2017).
[5] Z Zhang, Z Wang, T Shi, C Bi, F Rao, Y Cai, Q Liu, H Wu, P Zhou. InfoMat, 261, 290(2020).
[6] S Wachter, D K Polyushkin, O Bethge, T Mueller. Nat. Commun, 8(2017).
[7] C Liu, H Chen, X Hou, H Zhang, J Han, Y G Jiang, X Zeng, D W Zhang, P Zhou. Nat. Nanotechnol, 14, 662(2019).
[8] Z Yang, Z Wu, Y Lyu, J Hao. InfoMat, 1, 98(2019).
[9] Z Yu, Z Y Ong, S Li, J B Xu, G Zhang, Y W Zhang, Y Shi, X Wang. Adv. Funct. Mater, 27(2017).
[10] B Radisavljevic, A Radenovic, J Brivio, i V Giacometti, A Kis. Nat. Nanotechnol, 6, 147(2011).
[11] H Li, Q Zhang, C C R Yap, B K Tay, T H T Edwin, A Olivier, D Baillargeat. Adv. Funct. Mater, 22, 1385(2012).
[12] C Jin, J Kim, J Suh, Z Shi, B Chen, X Fan, M Kam, K Watanabe, T Taniguchi, S Tongay. Nat. Phys, 13, 127(2017).
[13] G Plechinger, F X Schrettenbrunner, J Eroms, D Weiss, C Schueller, T Korn. Phys. Status. Solidi. Rapid. Res. Lett, 6, 126(2012).
[14] K Hannewald, V Stojanović, J Schellekens, P Bobbert, G Kresse, J Hafner. Phys. Rev. B, 69(2004).
[15] S Das, H Y Chen, A V Penumatcha, J Appenzeller. Nano Lett, 13, 100(2012).
[16] D A Neamen. Semiconductor physics and devices: basic principles(2012).
[17] B Radisavljevic, A Kis. Nat. Mater, 12, 815(2013).