• Chinese Physics B
  • Vol. 29, Issue 9, (2020)
Xiaozhang Chen1, Lehua Gu2, Lan Liu1, Huawei Chen1, Jingyu Li1, Chunsen Liu3、†, and Peng Zhou1
Author Affiliations
  • 1The State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, China
  • 2Department of Physics, State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 00433, China
  • 3School of Computer Science, Fudan University, Shanghai 2004, China
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    DOI: 10.1088/1674-1056/aba9cf Cite this Article
    Xiaozhang Chen, Lehua Gu, Lan Liu, Huawei Chen, Jingyu Li, Chunsen Liu, Peng Zhou. Temperature-switching logic in MoS2 single transistors[J]. Chinese Physics B, 2020, 29(9): Copy Citation Text show less

    Abstract

    Due to their unique characteristics, two-dimensional (2D) materials have drawn great attention as promising candidates for the next generation of integrated circuits, which generate a calculation unit with a new working mechanism, called a logic transistor. To figure out the application prospects of logic transistors, exploring the temperature dependence of logic characteristics is important. In this work, we explore the temperature effect on the electrical characteristic of a logic transistor, finding that changes in temperature cause transformation in the calculation: logical output converts from ‘AND’ at 10 K to ‘OR’ at 250 K. The transformation phenomenon of temperature regulation in logical output is caused by energy band which decreases with increasing temperature. In the experiment, the indirect band gap of MoS2 shows an obvious decrease from 1.581 eV to 1.535 eV as the temperature increases from 10 K to 250 K. The change of threshold voltage with temperature is consistent with the energy band, which confirms the theoretical analysis. Therefore, as a promising material for future integrated circuits, the demonstrated characteristic of 2D transistors suggests possible application for future functional devices.
    Xiaozhang Chen, Lehua Gu, Lan Liu, Huawei Chen, Jingyu Li, Chunsen Liu, Peng Zhou. Temperature-switching logic in MoS2 single transistors[J]. Chinese Physics B, 2020, 29(9):
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