Applications of Huang–Rhys theory in semiconductor optical spectroscopy

Yong Zhang

doi:10.1088/1674-4926/40/9/091102

Journals >Journal of Semiconductors >Volume 40 >Issue 9 >Page 091102 > Article

Journal of Semiconductors
Vol. 40, Issue 9, 091102 (2019)

Applications of Huang–Rhys theory in semiconductor optical spectroscopy

Yong Zhang

Author Affiliations

Department of Electrical and Computer Engineering, University of North Carolina at Charlotte, Charlotte, NC 28223, USA

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DOI: 10.1088/1674-4926/40/9/091102 Cite this Article

Yong Zhang. Applications of Huang–Rhys theory in semiconductor optical spectroscopy[J]. Journal of Semiconductors, 2019, 40(9): 091102 Copy Citation Text

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(Color online) Illustration of a configuration coordinate model. (a) Energy levels before and after taking into account the lattice relaxation. (b) Transition energies in relaxed configuration coordinates.

Fig. 1. (Color online) Illustration of a configuration coordinate model. (a) Energy levels before and after taking into account the lattice relaxation. (b) Transition energies in relaxed configuration coordinates.

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(Color online) Photoluminescence spectrum of the isolated nitrogen bound exciton in GaP:N (4.2 K, [N] = 1016 cm-3, A line at 2.317 eV)[6].

Fig. 2. (Color online) Photoluminescence spectrum of the isolated nitrogen bound exciton in GaP:N (4.2 K, [N] = 10¹⁶ cm^-3, A line at 2.317 eV)^[6].

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Fig. 3. (Color online) Resonant Raman spectra of ZnTe measured by a 532 nm laser at room temperature for one high quality single crystal sample and a thin-film sample grown on a Si (211) substrate. Strong PL background of the single crystal sample has been removed.

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