Yong Zhang. Applications of Huang–Rhys theory in semiconductor optical spectroscopy[J]. Journal of Semiconductors, 2019, 40(9): 091102
- Journal of Semiconductors
- Vol. 40, Issue 9, 091102 (2019)
Fig. 1. (Color online) Illustration of a configuration coordinate model. (a) Energy levels before and after taking into account the lattice relaxation. (b) Transition energies in relaxed configuration coordinates.
![(Color online) Photoluminescence spectrum of the isolated nitrogen bound exciton in GaP:N (4.2 K, [N] = 1016 cm-3, A line at 2.317 eV)[6].](/richHtml/jos/2019/40/9/091102/img_2.jpg)
Fig. 2. (Color online) Photoluminescence spectrum of the isolated nitrogen bound exciton in GaP:N (4.2 K, [N] = 1016 cm-3, A line at 2.317 eV)[6 ].
Fig. 3. (Color online) Resonant Raman spectra of ZnTe measured by a 532 nm laser at room temperature for one high quality single crystal sample and a thin-film sample grown on a Si (211) substrate. Strong PL background of the single crystal sample has been removed.
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