High-responsivity InAs quantum well photo-FET integrated on Si substrates for extended-range short-wave infrared photodetector applications

DaeHwan Ahn; Sunghan Jeon; Hoyoung Suh; Seungwan Woo; Rafael Jumar Chu; Daehwan Jung; Won Jun Choi; Donghee Park; Jin-Dong Song; Woo-Young Choi; Jae-Hoon Han

doi:10.1364/PRJ.491498

Journals >Photonics Research >Volume 11 >Issue 8 >Page 1465 > Article

Photonics Research
Vol. 11, Issue 8, 1465 (2023)

High-responsivity InAs quantum well photo-FET integrated on Si substrates for extended-range short-wave infrared photodetector applications | Editors' Pick

DaeHwan Ahn^1、†, Sunghan Jeon^1、2、†, Hoyoung Suh¹, Seungwan Woo¹, Rafael Jumar Chu¹, Daehwan Jung¹, Won Jun Choi¹, Donghee Park¹, Jin-Dong Song¹, Woo-Young Choi², and Jae-Hoon Han^1、*

Author Affiliations

¹Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea

²Department of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea

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DOI: 10.1364/PRJ.491498 Cite this Article Set citation alerts

DaeHwan Ahn, Sunghan Jeon, Hoyoung Suh, Seungwan Woo, Rafael Jumar Chu, Daehwan Jung, Won Jun Choi, Donghee Park, Jin-Dong Song, Woo-Young Choi, Jae-Hoon Han. High-responsivity InAs quantum well photo-FET integrated on Si substrates for extended-range short-wave infrared photodetector applications[J]. Photonics Research, 2023, 11(8): 1465 Copy Citation Text

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(a) Fabrication flow of InAs QW photo-FETs integrated on SiO2 interlayer dielectric (ILD)/Si substrates using direct wafer bonding techniques. (b) Optical microscope (OM) and (c) TEM images of a transferred III-V layer on Si substrates using Au/Au metal bonding.

Fig. 1. (a) Fabrication flow of InAs QW photo-FETs integrated on SiO2 interlayer dielectric (ILD)/Si substrates using direct wafer bonding techniques. (b) Optical microscope (OM) and (c) TEM images of a transferred III-V layer on Si substrates using Au/Au metal bonding.

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(a) Schematic image of an InAs QW photo-FET. (b) High-angle annular dark-field scanning TEM (HAADF-STEM) image of an InAs QW photo-FET, confirming successful selective etching of N+-InGaAs source/drain (S/D) regions. High-resolution TEM image shows (c) an InAs QW channel. (d) PL spectrum and (e) energy band diagram of InAs QW structures. The band edge values of the conduction band and valence band for compressively strained InAs (s-InAs) were used to calculate the sub-band energies for an electron (E1) and a heavy hole (HH1). (f) Calculated wavelength peak of the InAs QW as a function of the InAs thickness.

Fig. 2. (a) Schematic image of an InAs QW photo-FET. (b) High-angle annular dark-field scanning TEM (HAADF-STEM) image of an InAs QW photo-FET, confirming successful selective etching of N+-InGaAs source/drain (S/D) regions. High-resolution TEM image shows (c) an InAs QW channel. (d) PL spectrum and (e) energy band diagram of InAs QW structures. The band edge values of the conduction band and valence band for compressively strained InAs (s-InAs) were used to calculate the sub-band energies for an electron (E1) and a heavy hole (HH1). (f) Calculated wavelength peak of the InAs QW as a function of the InAs thickness.

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Fig. 3. (a) Measurement configuration based on the confocal microscopy. (b) ID-VG curves of InAs QW photo-FETs in the dark and under light illumination. Photocurrents for (c) InAs QW photo-FETs and (d) reference InGaAs photo-FETs. (e) Responsivity of InAs QW and reference InGaAs photo-FETs. (f) ID-VG characteristics, (g) ID-VD characteristics, and (h) transconductance of InAs QW and reference InGaAs photo-FETs. (i) Comparison of effective mobility for both devices.

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Fig. 4. (a) Photocurrent and (b) responsivity for the InAs QW photo-FET with various channel lengths. (c) Relationship between the responsivity and channel length for the InAs QW photo-FET under the low optical power of 0.5 nW.

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Fig. 5. (a) Schematic image of the time response measurement. (b) Time response for the InAs QW photo-FET at the different VG of −0.6 V and 0.6 V. (c) The rising and falling time as a function of VG. (d) ID-VG characteristics of 5 μm gate length InAs QW photo-FET under illumination and in the dark. (e) The band diagram to explain the photocurrent generation for the InAs QW photo-FET. (f) Responsivity of 5 μm gate length InAs QW photo-FET.

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Fig. 6. (a) Photocurrent and (b) responsivity of InAs QW photo-FETs under 1.3, 1.55, and 2 μm wavelength optical sources. (c) Benchmark of responsivity of our InAs QW photo-FETs with commercialized InGaAs and extended InGaAs photodiodes (PDs) and InGaAs and InAs NW photo-FETs and PD.

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Channel	$I_{on} / I_{off}$	$μ_{eff}$ [ ${cm}^{2} / (V \cdot s)$ ]	R (A/W)	$t_{r} / t_{f}$	$V_{DD}$	Compatibility with CMOS
${In}_{0.53} {Ga}_{0.47} As$ [15]	$10^{5}$	608	$\sim 10^{6}$ at 1.3 μm	1 μs/ $\sim 100 μs$	1 V	O
${In}_{0.53} {Ga}_{0.47} As$ [16]	$10^{5}$	800	20.9 at 1.3 μm	NA	1 V	O
${In}_{0.53} {Ga}_{0.47} As$ [16]	$10^{5}$	800	29.7 at 1.55 μm	NA	1 V	O
InAs NW [26]	$10^{5}$	$\sim 2000$	5300 at 632 nm	NA	80 V	X
InAs NW [27]	NA	NA	$10^{5}$ at 532 nm	140 ms/12 ms	40 V	X
InAs NW [28]	$10^{5}$	$< 600$	4400 at 2 μm	1.4 ms/0.6 ms	40 V	X
${In}_{0.53} {Ga}_{0.47} As$ [43]	$10^{5}$	12	250 at 1.5 μm	1.2 s/1.7 s	1 V	X
${In}_{0.53} {Ga}_{0.47} As$ [43]	$10^{5}$	12	15 at 1.8 μm	1.2 s/1.7 s	1 V	X
InAs QW	$10^{5}$	2370	148,600 at 1.3 μm	9.1 μs/115 μs	1 V	O
in this work			75,820 at 1.55 μm
in this work			23,340 at 2 μm