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    Journals >Photonics Research >Volume 11 >Issue 8 >Page 1465 > Article
    • Photonics Research
    • Vol. 11, Issue 8, 1465 (2023)
    High-responsivity InAs quantum well photo-FET integrated on Si substrates for extended-range short-wave infrared photodetector applications | Editors' Pick
    DaeHwan Ahn1、†, Sunghan Jeon1、2、†, Hoyoung Suh1, Seungwan Woo1, Rafael Jumar Chu1, Daehwan Jung1, Won Jun Choi1, Donghee Park1, Jin-Dong Song1, Woo-Young Choi2, and Jae-Hoon Han1、*
    Author Affiliations
  • 1Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
  • 2Department of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
    • show less
    DOI: 10.1364/PRJ.491498 Cite this Article Set citation alerts
    DaeHwan Ahn, Sunghan Jeon, Hoyoung Suh, Seungwan Woo, Rafael Jumar Chu, Daehwan Jung, Won Jun Choi, Donghee Park, Jin-Dong Song, Woo-Young Choi, Jae-Hoon Han. High-responsivity InAs quantum well photo-FET integrated on Si substrates for extended-range short-wave infrared photodetector applications[J]. Photonics Research, 2023, 11(8): 1465 Copy Citation Text show less
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    DaeHwan Ahn, Sunghan Jeon, Hoyoung Suh, Seungwan Woo, Rafael Jumar Chu, Daehwan Jung, Won Jun Choi, Donghee Park, Jin-Dong Song, Woo-Young Choi, Jae-Hoon Han. High-responsivity InAs quantum well photo-FET integrated on Si substrates for extended-range short-wave infrared photodetector applications[J]. Photonics Research, 2023, 11(8): 1465
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