High-responsivity InAs quantum well photo-FET integrated on Si substrates for extended-range short-wave infrared photodetector applications

DaeHwan Ahn; Sunghan Jeon; Hoyoung Suh; Seungwan Woo; Rafael Jumar Chu; Daehwan Jung; Won Jun Choi; Donghee Park; Jin-Dong Song; Woo-Young Choi; Jae-Hoon Han

doi:10.1364/PRJ.491498

Journals >Photonics Research >Volume 11 >Issue 8 >Page 1465 > Article

Photonics Research
Vol. 11, Issue 8, 1465 (2023)

High-responsivity InAs quantum well photo-FET integrated on Si substrates for extended-range short-wave infrared photodetector applications | Editors' Pick

DaeHwan Ahn^1、†, Sunghan Jeon^1、2、†, Hoyoung Suh¹, Seungwan Woo¹, Rafael Jumar Chu¹, Daehwan Jung¹, Won Jun Choi¹, Donghee Park¹, Jin-Dong Song¹, Woo-Young Choi², and Jae-Hoon Han^1、*

Author Affiliations

¹Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea

²Department of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea

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DOI: 10.1364/PRJ.491498 Cite this Article Set citation alerts

DaeHwan Ahn, Sunghan Jeon, Hoyoung Suh, Seungwan Woo, Rafael Jumar Chu, Daehwan Jung, Won Jun Choi, Donghee Park, Jin-Dong Song, Woo-Young Choi, Jae-Hoon Han. High-responsivity InAs quantum well photo-FET integrated on Si substrates for extended-range short-wave infrared photodetector applications[J]. Photonics Research, 2023, 11(8): 1465 Copy Citation Text

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