Fei CHU, Hongzhuan CHEN, Ling PENG, Ying WANG, Jingyi NING. Research and design of high voltage radiation hardened lateral diffused metal oxide semiconductor[J]. Journal of Radiation Research and Radiation Processing, 2022, 40(5): 050701
Journals >Journal of Radiation Research and Radiation Processing >Volume 40 >Issue 5 >Page 050701 > Article
- Journal of Radiation Research and Radiation Processing
- Vol. 40, Issue 5, 050701 (2022)
Fig. 1. The schematic diagram of SEB and SEGR in LDMOS
Fig. 2. Structure of radiation hardened LDMOS
Fig. 3. Transfer characteristic and breakdown characteristic of LDMOS
Fig. 4. Diagram of LDMOS SEE irradiation test
Fig. 5. Results of LDMOS SEE irradiation test
Fig. 6. Micrograph of non-hardened LDMOS SEB failure point
Fig. 7. Influence of Pwell doping concentration on LDMOS SEB voltage
Fig. 8. Influence of Pwell doping concentration on LDMOS breakdown characteristic
Fig. 9. LDMOS drain region electric field during SEE
Fig. 10. SEB simulation of non-hardened LDMOS
Fig. 11. SEB simulation of radiation hardened LDMOS
Fig. 12. Drain current changes of LDMOS during SEE simulation
Fig. 13. Gate oxide electric field changes of LDMOS during SEE simulation
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Table 1. Radiation hardened measurements for LDMOS against single event effect (SEE)
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