Lateral diffused metal oxide semiconductors (LDMOS) used in power management integrated circuits demonstrate low anti-radiation performance. To address this issue, a high voltage radiation hardened LDMOS structure was studied, and an N-LDMOS device with a breakdown voltage of 60 V was designed.We analyzed the radiation hardening mechanism of the heavily doped P+well and buffer layer structures using the Ta ion model (Linear energy transfer, LET=79.2 MeV·cm²/mg) with a TCAD simulation tool and verified it via an irradiation test. The results revealed that by using the heavily doped P+well and buffer layer structures, the single event burnout voltage of the high-voltage LDMOS could be improved to 60 V.