• Laser & Optoelectronics Progress
  • Vol. 59, Issue 19, 1914005 (2022)
Shu Du, Ayiguli·Kasimu, Yutao Zhang, and Wurikaixi·Aiyiti*
Author Affiliations
  • School of Mechanical Engineering, Xinjiang University, Urumqi 830017, Xinjiang, China
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    DOI: 10.3788/LOP202259.1914005 Cite this Article Set citation alerts
    Shu Du, Ayiguli·Kasimu, Yutao Zhang, Wurikaixi·Aiyiti. Mechanical Properties of 316L Stainless Steel Lattice Structure Prepared by Selective Laser Melting[J]. Laser & Optoelectronics Progress, 2022, 59(19): 1914005 Copy Citation Text show less

    Abstract

    Laser selective melting technology was used to prepare three types of 316L stainless steel lattice structure samples with different porosities and pore sizes. The samples were subjected to quasistatic uniaxial compression tests. The test results showed that, compared with the solid metal structure, the elastic modulus of the lattice structure decreased from 180 GPa to 2 GPa. Furthermore, porosity was found to be the main factor affecting the lattice structure stiffness, and the corresponding numerical relationship was obtained. Under the condition of keeping the overall size and porosity unchanged, the change of lattice size and number was observed to have little effect on the stiffness and yield strength of lattice structure. The finite element model was applied to analyze the macroscopic deformation and stress distribution of the full-size lattice structure and the variation of the micro stress and strain of the single lattice. The printing accuracy of the sample was tested using an industrial CT system. The test show that the diameter of the rod measured perpendicular to the printing direction is greater than that measured parallel to the printing direction. According to the test results of the industrial CT system, the deformation mechanism of lattice structure is obtained.
    Shu Du, Ayiguli·Kasimu, Yutao Zhang, Wurikaixi·Aiyiti. Mechanical Properties of 316L Stainless Steel Lattice Structure Prepared by Selective Laser Melting[J]. Laser & Optoelectronics Progress, 2022, 59(19): 1914005
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