Avalanche mechanism analysis of 4H-SiC n-i-p and p-i-n avalanche photodiodes working in Geiger mode

Linlin Su; Weizong Xu; Dong Zhou; Fangfang Ren; Dunjun Chen; Rong Zhang; Youdou Zheng; Hai Lu

doi:10.3788/COL202119.092501

[1] H. Chen, K. Liu, L. Hu, A. A. Al-Ghamdi, X. Fang. New concept ultraviolet photodetectors. Mater. Today, 18, 493(2015).

[2] Y. Wang, Y. Qian, X. Kong. Photon counting based on solar-blind ultraviolet intensified complementary metal-oxide-semiconductor (ICMOS) for corona detection. IEEE Photon. J., 10, 7000919(2018).

[3] R. H. Hadfield. Single-photon detectors for optical quantum information applications. Nat. Photon., 3, 696(2009).

[4] X. Yi, S. Xie, B. Liang, L. W. Lim, J. S. Cheong, M. C. Debnath, D. L. Huffaker, C. H. Tan, J. P. R. David. Extremely low excess noise and high sensitivity AlAs0.56Sb0.44 avalanche photodiodes. Nat. Photon., 13, 683(2019).

[5] J. C. Campbell. Recent advances in avalanche photodiodes. J. Lightwave Technol., 34, 278(2016).

[6] C. J. Chunnilall, I. P. Degiovanni, S. Kueck, I. Müller, A. G. Sinclair. Metrology of single-photon sources and detectors: a review. Opt. Eng., 53, 1910(2014).

[7] A. Vert, S. Soloviev, P. Sandvik. SiC avalanche photodiodes and photomultipliers for ultraviolet and solar-blind light detection. Phys. Status Solidi A, 206, 2468(2009).

[8] A. R. Powell, L. B. Rowland. SiC materials-progress, status, and potential roadblocks. Proc. IEEE, 90, 942(2002).

[9] X. Bai, H. Liu, D. C. Mcintosh, J. C. Campbell. High-detectivity and high-single-photon-detection-efficiency 4H-SiC avalanche photodiodes. IEEE J. Quantum Electron., 45, 300(2009).

[10] D. Zhou, F. Liu, H. Lu, D. Chen, F. Ren, R. Zhang, Y. Zheng. High-temperature single photon detection performance of 4H-SiC avalanche photodiodes. IEEE Photon. Technol. Lett, 26, 1136(2014).

[11] X. Guo, A. L. Beck, Z. Huang, N. Duan, J. C. Campbell, D. Emerson, J. J. Sumakeris. Performance of low-dark-current 4H-SiC avalanche photodiodes with thin multiplication layer. IEEE Trans. Electron Devices, 53, 2259(2006).

[12] J. Hu, X. Xin, X. Li, J. H. Zhao, B. L. VanMil, K. K. Lew, R. L. Myers-Ward, C. R. Eddy, D. K. Gaskill. 4H-SiC visible-blind single-photon avalanche diode for ultraviolet detection at 280 and 350 nm. IEEE Trans. Electron Devices, 55, 1977(2008).

[13] X. Y. Zhou, J. Li, W. L. Lu, Y. Wang, X. Song, S. Yin, X. Tan, Y. Lü, H. Guo, G. Gu, Z. Feng. Large-area 4H-SiC avalanche photodiodes with high gain and low dark current for visible-blind ultraviolet detection. Chin. Opt. Lett., 16, 060401(2018).

[14] X. Y. Zhou, X. Tan, Y. Wang, X. Song, T. Han, J. Li, W. Lu, G. Gu, S. Liang, Y. Lü, Z. Feng. High-performance 4H-SiC p-i-n ultraviolet avalanche photodiodes with large active area. Chin. Opt. Lett., 17, 090401(2019).

[15] A. L. Beck, B. Yang, X. Guo, J. C. Campbell. Edge breakdown in 4H-SiC avalanche photodiodes. IEEE J. Quantum Electron., 40, 321(2004).

[16] X. Guo, A. L. Beck, J. C. Campbell, D. Emerson, J. Sumakeris. Spatial nonuniformity of 4H-SiC avalanche photodiodes at high gain. IEEE J. Quantum Electron., 41, 1213(2005).

[17] X. Cai, L. Li, H. Lu, D. Zhou, W. Xu, D. Chen, F. Ren, R. Zhang, Y. Zheng, G. Li. Vertical 4H-SiC n-i-p-n APDs with partial trench isolation. IEEE Photon. Technol. Lett, 30, 805(2018).

[18] S. Yang, D. Zhou, X. Cai, W. Xu, H. Lu, D. Chen, F. Ren, R. Zhang, Y. Zheng, R. Wang. Analysis of dark count mechanisms of 4H-SiC ultraviolet avalanche photodiodes working in Geiger mode. IEEE Trans. Electron Devices, 64, 4532(2017).

[19] H. Y. Cha, P. M. Sandvik. Electrical and optical modeling of 4H-SiC avalanche photodiodes. Jpn. J. Appl. Phys., 47, 5423(2008).

[20] T. Hatakeyama, T. Watanabe, T. Shinohe, K. Kojima, K. Arai, N. Sano. Impact ionization coefficients of 4H silicon carbide. Appl. Phys. Lett., 85, 1380(2004).

[21] J. E. Green, W. S. Loh, A. R. J. Marshall, R. C. Tozer, J. P. R. David, S. I. Soloviev, P. M. Sandvik. Impact ionization coefficients in 4H-SiC by ultralow excess noise measurement. IEEE Trans. Electron Devices, 59, 1030(2012).

[22] M. Hjelm, H. Nilsson, A. Martinez, K. F. Brennan, E. Bellotti. Monte Carlo study of high-field carrier transport in 4H-SiC including band-to-band tunneling. J. Appl. Phys., 93, 1099(2003).

[23] H. Niwa. Impact ionization coefficients in 4H-SiC toward ultrahigh-voltage power devices. IEEE Trans. Electron Devices, 62, 3326(2015).

Data from CrossRef