• Chinese Optics Letters
  • Vol. 19, Issue 9, 092501 (2021)
Linlin Su1、2, Weizong Xu1, Dong Zhou1、*, Fangfang Ren1, Dunjun Chen1, Rong Zhang1, Youdou Zheng1, and Hai Lu1、**
Author Affiliations
  • 1School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, China
  • 2School of Electronic and Information Engineering, Nanjing University of Information Science & Technology Binjiang College, Wuxi 214105, China
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    Abstract

    Understanding detailed avalanche mechanisms is critical for design optimization of avalanche photodiodes (APDs). In this work, avalanche characteristics and single photon counting performance of 4H-SiC n-i-p and p-i-n APDs are compared. By studying the evolution of breakdown voltage as a function of incident light wavelength, it is confirmed that at the deep ultraviolet (UV) wavelength region the avalanche events in 4H-SiC n-i-p APDs are mainly induced by hole-initiated ionization, while electron-initiated ionization is the main cause of avalanche breakdown in 4H-SiC p-i-n APDs. Meanwhile, at the same dark count rate, the single photon counting efficiency of n-i-p APDs is considerably higher than that of p-i-n APDs. The higher performance of n-i-p APDs can be explained by the larger impact ionization coefficient of holes in 4H-SiC. In addition, this is the first time, to the best of our knowledge, to report single photon detection performance of vertical 4H-SiC n-i-p-n APDs.
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    Linlin Su, Weizong Xu, Dong Zhou, Fangfang Ren, Dunjun Chen, Rong Zhang, Youdou Zheng, Hai Lu. Avalanche mechanism analysis of 4H-SiC n-i-p and p-i-n avalanche photodiodes working in Geiger mode[J]. Chinese Optics Letters, 2021, 19(9): 092501
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    Category: Optoelectronics
    Received: Jan. 24, 2021
    Accepted: Mar. 4, 2021
    Posted: Jul. 6, 2021
    Published Online: Jul. 8, 2021
    The Author Email: Dong Zhou (dongzhou@nju.edu.cn), Hai Lu (hailu@nju.edu.cn)