• Chinese Optics Letters
  • Vol. 19, Issue 9, 092501 (2021)
Linlin Su1、2, Weizong Xu1, Dong Zhou1、*, Fangfang Ren1, Dunjun Chen1, Rong Zhang1, Youdou Zheng1, and Hai Lu1、**
Author Affiliations
  • 1School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, China
  • 2School of Electronic and Information Engineering, Nanjing University of Information Science & Technology Binjiang College, Wuxi 214105, China
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    DOI: 10.3788/COL202119.092501 Cite this Article Set citation alerts
    Linlin Su, Weizong Xu, Dong Zhou, Fangfang Ren, Dunjun Chen, Rong Zhang, Youdou Zheng, Hai Lu. Avalanche mechanism analysis of 4H-SiC n-i-p and p-i-n avalanche photodiodes working in Geiger mode[J]. Chinese Optics Letters, 2021, 19(9): 092501 Copy Citation Text show less

    Abstract

    Understanding detailed avalanche mechanisms is critical for design optimization of avalanche photodiodes (APDs). In this work, avalanche characteristics and single photon counting performance of 4H-SiC n-i-p and p-i-n APDs are compared. By studying the evolution of breakdown voltage as a function of incident light wavelength, it is confirmed that at the deep ultraviolet (UV) wavelength region the avalanche events in 4H-SiC n-i-p APDs are mainly induced by hole-initiated ionization, while electron-initiated ionization is the main cause of avalanche breakdown in 4H-SiC p-i-n APDs. Meanwhile, at the same dark count rate, the single photon counting efficiency of n-i-p APDs is considerably higher than that of p-i-n APDs. The higher performance of n-i-p APDs can be explained by the larger impact ionization coefficient of holes in 4H-SiC. In addition, this is the first time, to the best of our knowledge, to report single photon detection performance of vertical 4H-SiC n-i-p-n APDs.
    M=IMPIMDIPID,

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    SPDE=PCRDCRn×100%,

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    C=εε0Sd,

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    Tq(CAPD+Cs)×RAPD.

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    Tr=(CAPD+Cs)×RL,

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    Linlin Su, Weizong Xu, Dong Zhou, Fangfang Ren, Dunjun Chen, Rong Zhang, Youdou Zheng, Hai Lu. Avalanche mechanism analysis of 4H-SiC n-i-p and p-i-n avalanche photodiodes working in Geiger mode[J]. Chinese Optics Letters, 2021, 19(9): 092501
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