Avalanche mechanism analysis of 4H-SiC n-i-p and p-i-n avalanche photodiodes working in Geiger mode

Linlin Su; Weizong Xu; Dong Zhou; Fangfang Ren; Dunjun Chen; Rong Zhang; Youdou Zheng; Hai Lu

doi:10.3788/COL202119.092501

Journals >Chinese Optics Letters >Volume 19 >Issue 9 >Page 092501 > Article

Chinese Optics Letters
Vol. 19, Issue 9, 092501 (2021)

Avalanche mechanism analysis of 4H-SiC n-i-p and p-i-n avalanche photodiodes working in Geiger mode

Linlin Su^1、2, Weizong Xu¹, Dong Zhou^1、*, Fangfang Ren¹, Dunjun Chen¹, Rong Zhang¹, Youdou Zheng¹, and Hai Lu^1、**

Author Affiliations

¹School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, China

²School of Electronic and Information Engineering, Nanjing University of Information Science & Technology Binjiang College, Wuxi 214105, China

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DOI: 10.3788/COL202119.092501 Cite this Article Set citation alerts

Linlin Su, Weizong Xu, Dong Zhou, Fangfang Ren, Dunjun Chen, Rong Zhang, Youdou Zheng, Hai Lu. Avalanche mechanism analysis of 4H-SiC n-i-p and p-i-n avalanche photodiodes working in Geiger mode[J]. Chinese Optics Letters, 2021, 19(9): 092501 Copy Citation Text

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