Fig. 1. Energy band model of one trap energy level and one luminescence center^[38]

Fig. 2. Influences of different kinetic processes [the first order kinetics (b=1), the second order kinetics (b=2), and the general kinetics (b=1.5)] on shape of TL peak^[46]

Fig. 3. TL peak location and trap depth of CaMgSi₂O₆∶Mn²⁺,Ln³⁺(Ln=Dy, Pr, Ce, Nd). (a) Normalized TL curves; (b) diagram of energy level relative position in gaps of CaMgSi₂O₆∶Mn²⁺,Ln³⁺ for different rare earth ions^[12]

Fig. 4. TL curves with different heating rates and trap depth analysis^[16]. (a) SSON∶Eu; (b) SSON∶Eu,Ce; (c) SSON∶Eu,Nd; (d) SSON∶Eu, Dy; (e) plots of InTm2β~1Tm

Fig. 5. Trap analysis of CaS∶Eu²⁺,Sm^3+[20]. (a) Analysis of TL curves by peak shape method; (b) photostimulated excitation spectrum of CaS∶Eu²⁺,Sm³⁺

Fig. 6. Diagrams of initial rise method^[58]. (a) Selection of initial rise part; (b) Arrhenius plot of ln(I) and 1/T

Fig. 7. Fitted results of TL curves of Ba₂SiO₄∶Dy³⁺ obtained by computer fitting method (FOM∶1.6)^[25]

Fig. 8. Process of trap depth-density distribution analysis^[59]. (a) Schematic of trap depth distribution as a function of excitation temperature T_exc; (b) TL curves under different excitation temperatures T_exc; (c) density of trap at a certain depth estimated according to difference of TL integral intensities at two different excitation temperatures; (d) depth-density distribution of trap

Fig. 9. Analysis method of depth-density-time^[13]. (a) TL curves for different delay time; (b) trap depth-density-action time distribution

Fig. 10. Thermal quenching curves of SrAl₂O₄∶Eu,Dy and TL curves before and after correction^[60]

Table 1. Calculated trap depths of persistent luminescence materials by different analysis methods of PL curve