The afterglow properties of persistent luminescence materials depend on the trap energy level in materials. The afterglow modulation can be achieved by tuning trap depths for the proper capture ability of electrons or holes. Thermoluminescence is sensitive to the trap energy levels formed by impurities and lattice defects in semiconductors. It is an essential tool for the trap distribution analysis of persistent luminescence materials. Parameters such as the depth and density of the trap energy level in persistent luminescence materials can be quantitatively analyzed by measuring thermoluminescence spectra and adopting an appropriate spectral-curve analysis method. However, a well-accepted standard method for deducing the depth and density of traps from thermoluminescence spectra is still lacking. Herein, on the basis of the introduction of basic principles of thermoluminescence and thermoluminescence curve measurement, the peak shape characteristics of different kinetic models and their applicable conditions were first introduced. Then, the analysis methods of the thermoluminescence curve were summarized. Their applications in the analysis of trap characteristics of persistent luminescence materials were discussed after introducing thermoluminescence. The primary focus was on the application and research progress of the initial rise method.