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Journal of Semiconductors
Vol. 45, Issue 3, 032401 (2024)

975 nm multimode semiconductor lasers with high-order Bragg diffraction gratings

Zhenwu Liu^1、2, Li Zhong^1、2、*, Suping Liu^1、**, and Xiaoyu Ma^1、2

Author Affiliations

¹National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

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DOI: 10.1088/1674-4926/45/3/032401 Cite this Article

Zhenwu Liu, Li Zhong, Suping Liu, Xiaoyu Ma. 975 nm multimode semiconductor lasers with high-order Bragg diffraction gratings[J]. Journal of Semiconductors, 2024, 45(3): 032401 Copy Citation Text

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References

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[16] Y X Man, L Zhong, X Y Ma et al. 975 nm semiconductor lasers with ultra-low internal optical loss. Acta Opt Sin, 40, 1914001(2020).

[17] S Adachi. GaAs, AlAs, and AlxGa1− xAs: Material parameters for use in research and device applications. J Appl Phys, 58, R1(1985).

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[21] J H Kang, H Wenzel, E Freier et al. Continuous-wave operation of 405 nm distributed Bragg reflector laser diodes based on GaN using 10th-order surface gratings. Photon Res, 10, 1157(2022).

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Zhenwu Liu, Li Zhong, Suping Liu, Xiaoyu Ma. 975 nm multimode semiconductor lasers with high-order Bragg diffraction gratings[J]. Journal of Semiconductors, 2024, 45(3): 032401

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