Zhenwu Liu, Li Zhong, Suping Liu, Xiaoyu Ma. 975 nm multimode semiconductor lasers with high-order Bragg diffraction gratings[J]. Journal of Semiconductors, 2024, 45(3): 032401
- Journal of Semiconductors
- Vol. 45, Issue 3, 032401 (2024)
Fig. 1. (Color online) Refractive index and light field distribution of the asymmetric large optical cavity structure.
Fig. 2. (Color online) Schematic diagram of the model for a single grating cycle
Fig. 3. (Color online) (a) The grating period and etch slot width versus grating transmittance for high precision scanning. (b) The grating period and etch slot width versus grating reflectance for high precision scanning.
Fig. 4. (Color online) (a) Relationship between etching depth and reflectivity for a grid period of 25. (b) Transmittance of gratings at different etching depths.
Fig. 5. (Color online) (a) Grating reflectance and transmittance versus grating period for a grating etching depth of 1.35 μm. (b) Transmittance of gratings at different grating period numbers.
Fig. 6. (Color online) (a) Effect of etch depth on threshold gain. (b) Effect of grating period on threshold gain.
Fig. 7. SEM image after grid etching.
Fig. 8. (Color online) (a) P−I−V curve of a HO-BDG-LD with 240 μm width; (b) P−I−V curve of a FP-LD without grating.
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Table 0. Epitaxial structures of the laser diode.
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Table 0. Parameters used in the calculation.
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