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Contents
2005
Volume: 24 Issue 3
18 Article(s)
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Research Article
NOVEL INFRARED OBJECT TRACKING METHOD BASED ON MEAN SHIFT
[in Chinese], and [in Chinese]
The mean shift algorithm is a nonparametric statistical method for seeking the nearest mode of a point sample distribution. In the color image sequence, the mean shift algorithm is an efficient method for tracking object. However, there is a singular grey space for representing the infrared object in the infrared objecThe mean shift algorithm is a nonparametric statistical method for seeking the nearest mode of a point sample distribution. In the color image sequence, the mean shift algorithm is an efficient method for tracking object. However, there is a singular grey space for representing the infrared object in the infrared object tracking scenario. Due to the lack of the information for the object representation, the object tracking based on the mean shift algorithm may be lost in the infrared sequence. To overcome this disadvantage, a new scheme that is to construct a cascade grey space is proposed. Moreover, for the different infrared image sequence, different strategies are used to generate different cascade grey spaces. The experimental results of two different infrared image sequences show our new scheme is efficient and robust for the infrared small object tracking and infrared object in the severe clutter background tracking..
Journal of Infrared and Millimeter Waves
- Publication Date: Jan. 01, 1900
- Vol. 24, Issue 3, 231 (2005)
STUDY ON PERCEPTUAL EVALUATION OF FUSED IMAGE QUALITY FOR COLOR NIGHT VISION
[in Chinese], [in Chinese], and [in Chinese]
With the development and the application of visible-IR image fusion techniques in color vision night, evaluating the performance of image-fused algorithms is becoming an important aspect. In this study, three basic visual evaluation factors, target detection, details and colorfulness, were presented for evaluating percWith the development and the application of visible-IR image fusion techniques in color vision night, evaluating the performance of image-fused algorithms is becoming an important aspect. In this study, three basic visual evaluation factors, target detection, details and colorfulness, were presented for evaluating perceptual quality of color fused images, and the degree of correlation between the perceptual quality and the three evaluation factors was investigated. Visual evaluation experiment on the color images fused visible and IR images of ten scenes by four fusion algorithms was conducted. The experimental results show that the fuesd images have good performances in target detection, the correlation coefficient between the perceptual qulity and details is 0.89, and the correlation coefficient between the perceptual qulity and colorfulness is 0.75 . It indicates that details are the main factor and the colorfulness plays an important role when targets are beyong the detected level..
Journal of Infrared and Millimeter Waves
- Publication Date: Jan. 01, 1900
- Vol. 24, Issue 3, 236 (2005)
MEGAGAUSS SPECTRA OF SEMICONDUCTORS: MERCURYSELENIDE LOW-DIMENSIONAL STRUCTURES INMAGNETIC FIELDS UP TO 1000 T
[in Chinese]
Mercuryselenide is a zero-gap semiconductor of Ⅱ-Ⅵ-family. The iron-doped modification HgSe:Fe has a “Fermi-level pinning” beyond the electron concentration of 5×10 18 cm -3 . Due to the short-range correlation of Fe ++ /Fe +++ -system, a dramatic increase of carrier mobility is observed, so that any quantum effecMercuryselenide is a zero-gap semiconductor of Ⅱ-Ⅵ-family. The iron-doped modification HgSe:Fe has a “Fermi-level pinning” beyond the electron concentration of 5×10 18 cm -3 . Due to the short-range correlation of Fe ++ /Fe +++ -system, a dramatic increase of carrier mobility is observed, so that any quantum effect in 3D, 2D, 1D, and 0D is well detected. Applying molecular-beam epitaxy for the sample preparation, we present magnetospectral data of selected samples of this compound demonstrating various features in magnetic fields up to 1000 T by applying different field generators. The resulting data are explained in connection with suitable theoretical concepts basing on the k *p-method as well as on the tight-binding approximation..
Journal of Infrared and Millimeter Waves
- Publication Date: Jan. 01, 1900
- Vol. 24, Issue 3, 161 (2005)
MECHANISMS FOR PHOTOLUMINESCENCE FROM NANOSCALE SILICON/SILICON OXIDE SYSTEMS
[in Chinese]
Most porous silicon samples studied have been oxidized in various degrees. Oxidized porous silicon and the nanoscale silicon particles embedded oxidized silicon have similar structures and luminescence characteristics. Both of them consist of a great quantity of nanoscale silicon particles, each of which is surrounded Most porous silicon samples studied have been oxidized in various degrees. Oxidized porous silicon and the nanoscale silicon particles embedded oxidized silicon have similar structures and luminescence characteristics. Both of them consist of a great quantity of nanoscale silicon particles, each of which is surrounded by an oxidized silicon layer, and can be named as nanoscale silicon/oxidized silicon systems. They are the most strongly studied and very promising silicon-based luminescence materials. In this article, the photoluminescence mechanisms of the nanoscale silicon particles/oxidized silicon systems were summarized and discussed. The related research works finished by our group in Peking university were briefly introduced..
Journal of Infrared and Millimeter Waves
- Publication Date: Jun. 01, 2005
- Vol. 24, Issue 3, 165 (2005)
PHOTOLUMINESCENCE OF LOW-DIMENSIONAL SEMICONDUCTOR STRUCTURES UNDER PRESSURE
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
Photoluminescence of some low-dimensional semiconductor structures has been investigated under pressure. The measured pressure coefficients of In_ 0.55 Al_ 0.45 As/Al_ 0.5 Ga_ 0.5 As quantum dots with average diameter of 26, 52 and 62 nm are 82, 94 and 98 meV/GPa, respectively. It indicates that these quantum dots are Photoluminescence of some low-dimensional semiconductor structures has been investigated under pressure. The measured pressure coefficients of In_ 0.55 Al_ 0.45 As/Al_ 0.5 Ga_ 0.5 As quantum dots with average diameter of 26, 52 and 62 nm are 82, 94 and 98 meV/GPa, respectively. It indicates that these quantum dots are type-Ⅰ dots. On the other hand, the measured pressure coefficient for quantum dots with 7 nm in size is -17meV/GPa, indicating the type-Ⅱ character. The measured pressure coefficient for Mn emission in ZnS:Mn nanoparticles is -34.6meV/GPa, in agreement with the predication of the crystal field theory. However, the DA emission is nearly independent on pressure, indicating that this emission is related to the surface defects in ZnS host. The measured pressure coefficient of Cu emission in ZnS:Cu nanoparticles is 63.2 meV/GPa. It implies that the acceptor level introduced by Cu ions has some character of shallow level. The measured pressure coefficient of Eu emission in ZnS:Eu nanoparticles is 24.11meV /GPa, in contrast to the p redication of the crystal field theory. Itmay be due to the strong interaction between the excited state of Euions and the conduction band of ZnS host..
Journal of Infrared and Millimeter Waves
- Publication Date: Jun. 01, 2005
- Vol. 24, Issue 3, 174 (2005)
STUDY OF ULTRAFAST PROCESS IN SEMICONDUCTOR
[in Chinese], [in Chinese], [in Chinese], and [in Chinese]
The ultrafast process in semiconductor was studied by using femtosecond pulse laser. The momentum relaxation of carriers excited by laser was detected by using ultrafast photo-voltage spectra. The time of momentum relaxation of carriers in semiconductor Si is about 70 femtosecond, which is related to the probability ofThe ultrafast process in semiconductor was studied by using femtosecond pulse laser. The momentum relaxation of carriers excited by laser was detected by using ultrafast photo-voltage spectra. The time of momentum relaxation of carriers in semiconductor Si is about 70 femtosecond, which is related to the probability of carrier-carrier scattering. In SiGe quantum dot, it is about 130 femtosecond due to the decrease of carrier-carrier scattering. The energy relaxation and diffusion processes can be measured by ultrafast reflection spectra. The time of energy relaxation of carriers excited by high energy laser is about several picoseconds, which is related to the probability of carrier-phonon scattering, and the diffusion time of carriers excited by low energy laser is about several hundreds picoseconds..
Journal of Infrared and Millimeter Waves
- Publication Date: Jun. 01, 2005
- Vol. 24, Issue 3, 179 (2005)
MICRO/NANO-FABRICATION OF CONDENSED MATTERS BY NEAR INFRARED FEMTOSECOND LASER PULSES
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
Near infrared femtosecond laser micro/nano-fabrication using in transparent condensed matters like glass and polymers was reported. Femtosecond laser induced refractive index change was used for fabrication of gratings and other elements inside silica glass. Drilling from rear surface in contact with water, microholes Near infrared femtosecond laser micro/nano-fabrication using in transparent condensed matters like glass and polymers was reported. Femtosecond laser induced refractive index change was used for fabrication of gratings and other elements inside silica glass. Drilling from rear surface in contact with water, microholes with large aspect ratio were machined in soda-lime glass; With the change of laser focus inside two-photon absorption polymer, straight and wavy lines are polymerized..
Journal of Infrared and Millimeter Waves
- Publication Date: Jun. 01, 2005
- Vol. 24, Issue 3, 182 (2005)
OPTICAL PROPERTIES AND EXCITON LOCALIZATION IN GaNAs/GaAs
[in Chinese], [in Chinese], [in Chinese], and [in Chinese]
GaNAs/GaAs single quantum wells (SQWs) and dilute GaNAs bulk grown by molecular beam epitaxy(MBE) were studied by photoluminescence (PL), selectively-excited PL, and time-resolved PL. Exciton localization and delocalization were investigated in detail. Under short pulse laser excitation, the delocalization exciton emisGaNAs/GaAs single quantum wells (SQWs) and dilute GaNAs bulk grown by molecular beam epitaxy(MBE) were studied by photoluminescence (PL), selectively-excited PL, and time-resolved PL. Exciton localization and delocalization were investigated in detail. Under short pulse laser excitation, the delocalization exciton emission was revealed in GaNAs/GaAs SQWs. It exhibits quite different optical properties from N-related localized states. In dilute GaNAs bulk, a transition of alloy band related recombination was observed by measuring the PL dependence on temperature and excitation intensity and time-resolved PL as well. This alloy-related transition presents intrinsic optical properties. These results are very important for realizing the abnomal features of Ⅲ-Ⅴ-N semiconductors..
Journal of Infrared and Millimeter Waves
- Publication Date: Jun. 01, 2005
- Vol. 24, Issue 3, 185 (2005)
SPINTRONICS, SPINTRONIC DEVICES AND ELECTRON-SPIN RELAXATION IN GaAs
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
The development of spintronics and spintronic devices, the applications of spintronic devices as well as the research subjects and current status on semiconductor spintronics are reviewed. Our research results on the relaxation of polarization and coherence of electron spin are given for GaAs.The development of spintronics and spintronic devices, the applications of spintronic devices as well as the research subjects and current status on semiconductor spintronics are reviewed. Our research results on the relaxation of polarization and coherence of electron spin are given for GaAs..
Journal of Infrared and Millimeter Waves
- Publication Date: Jun. 01, 2005
- Vol. 24, Issue 3, 189 (2005)
INVESTIGATIONS ON OPTICAL PROPERTIES OF AlGaInN EPILAYERS GROWN BY MOCVD
[in Chinese], [in Chinese], and [in Chinese]
Microscopic luminescence and Raman scattering study was carried on AlInGaN quaternary alloy. Based on the analyses of SEM image and cathodoluminescence spectra measured around V-defects, the correlation between V-defect formation and indium segregation was clarified. Raman scattering of thin AlInGaN epilayers was invesMicroscopic luminescence and Raman scattering study was carried on AlInGaN quaternary alloy. Based on the analyses of SEM image and cathodoluminescence spectra measured around V-defects, the correlation between V-defect formation and indium segregation was clarified. Raman scattering of thin AlInGaN epilayers was investigated by using the short wavelength excitation of 325nm laser line. The frequency shift of A_1(LO) phonon induced by the change of Al composition in alloy was observed. The Raman scattering of LO phonons was found to be resonantly enhanced with outgoing resonance, and it is attributed to the cascade-like electron-multiphonon interaction mechanism..
Journal of Infrared and Millimeter Waves
- Publication Date: Jun. 01, 2005
- Vol. 24, Issue 3, 193 (2005)
FAST INFRARED IMAGE SEGMENTATION ALGORITHM
[in Chinese], [in Chinese], and [in Chinese]
The Otsu’s method is an effective algorithm for image segmentation. But it is unfit for the real-time image processing in the high frame rate infrared imaging tracking system for it is time-consuming. A fast half-approximation algorithm of Otsu’s method was presented based on the curve of the between-class variance. ThThe Otsu’s method is an effective algorithm for image segmentation. But it is unfit for the real-time image processing in the high frame rate infrared imaging tracking system for it is time-consuming. A fast half-approximation algorithm of Otsu’s method was presented based on the curve of the between-class variance. The optimal threshold was obtained from the first derivative of the between-class variance function with the half-approximation method. The theoretical analysis and simulation results show that the algorithm reduces the computation cost greatly. It has a good performance on real-time processing and is easy to be realized in engineering..
Journal of Infrared and Millimeter Waves
- Publication Date: Jun. 01, 2005
- Vol. 24, Issue 3, 224 (2005)
INFRARED MICROBOLOMETER OF LATERAL POLYSILICON p + p- n + JUNCTION BASED ON STANDARD CMOS PROCESSES
[in Chinese], and [in Chinese]
By using standard CMOS processes and bulk micromaching technology, a uncooled infrared microbolometer detector based on the temperature character of the lateral polysilicon p +p -n + junction was developed. The temperature characteristic of the polysilicon p +p -n + junction's foreword bias were analyzed in detail.By using standard CMOS processes and bulk micromaching technology, a uncooled infrared microbolometer detector based on the temperature character of the lateral polysilicon p +p -n + junction was developed. The temperature characteristic of the polysilicon p +p -n + junction's foreword bias were analyzed in detail. The theoretic expression and experimental data of the temperature rate of change of forward voltage drop were presented. The design ideas and fabrication processes were given. The temperature coefficient of the foreword voltage at a constant current is 1.5mV/K at various temperatures in the range of 284K to 253K. The responsivity and detectivity (D *) are 5.7×10 3V/W and 1.2×10 8cm.Hz 1/2 .W -1 in 3～5μm IR radiation band, respectively..
Journal of Infrared and Millimeter Waves
- Publication Date: Jan. 01, 1900
- Vol. 24, Issue 3, 227 (2005)
Research Articles
METHOD OF SATELLITE REMOTE SENSING OF LAKE WATER QUALITY AND ITS APPLICATIONS
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
By field experiment in water sampling for chemical analysis and synchronous measurement of reflected light spectrum of water, the optimal channel combination models were obtained to retrieve chlorophyll-a concentration and suspended sediment concentration from remote sensing data of FY-1C multi-channel scanning radiomeBy field experiment in water sampling for chemical analysis and synchronous measurement of reflected light spectrum of water, the optimal channel combination models were obtained to retrieve chlorophyll-a concentration and suspended sediment concentration from remote sensing data of FY-1C multi-channel scanning radiometer, Landsat-5 TM, SeaWiFS of Seasat and a supposed set of remote sensing channels. A method retrieving water quality parameters by satellite remote sensing was suggested, in which the atmospheric transmittance and reflectance were determined by the reflected light spectrum of standard reflecting board on water and satellite remote sensing images themselves for the atmospheric calibration. The models and methods were used to retrieve the eutrophic degree, its space distribution and its change with year of Tai lake and Dianchi lake, which are typical eutrophic lakes of china, in 1980s and 1990s. The results of this study could be as the bases for operational satellite remote sensing of water qual.
Journal of Infrared and Millimeter Waves
- Publication Date: Jun. 01, 2005
- Vol. 24, Issue 3, 198 (2005)
ATMOSPHERIC TRANSMITTANCE CALCULATION OF INFRARED SPECTRAL RADIOMETER TO BE ONBOARD FY-3A METEOROLOGICAL SATELLITE
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
This study is concerned with the calculation of atmospheric transmittance and weighting functions of IRSR based on GENLN2 spectral transmittance database and RTTOV7 fast transmittance model. The results indicate that most weighting functions of IRSR are similar with that of HIRS/3. It also shows that the peak energy coThis study is concerned with the calculation of atmospheric transmittance and weighting functions of IRSR based on GENLN2 spectral transmittance database and RTTOV7 fast transmittance model. The results indicate that most weighting functions of IRSR are similar with that of HIRS/3. It also shows that the peak energy contribution levels satisfy the designed requirement basically..
Journal of Infrared and Millimeter Waves
- Publication Date: Jun. 01, 2005
- Vol. 24, Issue 3, 203 (2005)
PHOTOLUMINESCENCE OF LARGE- SIZED INAS/GAAS QUANTUM DOTS UNDER HYDROSTATIC PRESSURE
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
The photoluminescence of self-assembled InAs/GaAs quantum dots, which are 7.3nm in height and 78nm in base size, was investigated at 15K under hydrostatic pressures up to 9GPa. The emissions from both the ground and the first excited states in large InAs dots were observed. The pressure coefficients of the two emissionThe photoluminescence of self-assembled InAs/GaAs quantum dots, which are 7.3nm in height and 78nm in base size, was investigated at 15K under hydrostatic pressures up to 9GPa. The emissions from both the ground and the first excited states in large InAs dots were observed. The pressure coefficients of the two emissions are 69 and 72 meV/GPa respectively, which are lower than those of small InAs/GaAs dots. The analysis based on a nonlinear elasticity theory reveals that the small pressure coefficients mainly result from the changes of the misfit strain and the elastic constants with pressure. The pressure experiments suggest that the excited state emissions originate from the optical transitions between the first excited electron states and the first excited hole states..
Journal of Infrared and Millimeter Waves
- Publication Date: Jun. 01, 2005
- Vol. 24, Issue 3, 207 (2005)
STUDY ON PERIODICALLY POLED CHARACTERISTICS OF MgO:LiNbO3 AND SECOND HARMONIC GREEN LIGHT GENERATION
[in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
The periodically poled characteristics of LiNbO3 doped 5mol% MgO were investigated and the domain reversal field was found to be 3kV/mm. According to the influence of MgO doped on the crystal defect, the decrease reason of the domain reversal field was explained. By using short-pulse field, the periodically poled gratiThe periodically poled characteristics of LiNbO3 doped 5mol% MgO were investigated and the domain reversal field was found to be 3kV/mm. According to the influence of MgO doped on the crystal defect, the decrease reason of the domain reversal field was explained. By using short-pulse field, the periodically poled grating was successfully fabricated in 1.0mm thick MgO:LiNbO3. Second harmonic green light generation in periodically poled MgO:LiNbO3 was demonstrated. The green light power of 3.5mW at 532nm is obtained when the fundamental power is 75mW, and the conversion efficiency is 4.6%..
Journal of Infrared and Millimeter Waves
- Publication Date: Jun. 01, 2005
- Vol. 24, Issue 3, 213 (2005)
THRESHOLD DESIGN METHOD OF CFAR FOR MILLIMETER-WAVE COLLISION WARNING RADAR
[in Chinese], [in Chinese], [in Chinese], and [in Chinese]
The testing data of millimeter-wave collision-warning radar were firstly analyzed by time-frequency method. Then a constant false alarm rate (CFAR) scheme for millimeter wave collision-avoidance radar was designed on the basis of the clutter statistics distribution rule. This proposed method can change the threshold wiThe testing data of millimeter-wave collision-warning radar were firstly analyzed by time-frequency method. Then a constant false alarm rate (CFAR) scheme for millimeter wave collision-avoidance radar was designed on the basis of the clutter statistics distribution rule. This proposed method can change the threshold with the clutter to make the false alarm rate constant. The testing result and the performance of this CFAR processor were presented. It is shown that this method is practical in the project..
Journal of Infrared and Millimeter Waves
- Publication Date: Jun. 01, 2005
- Vol. 24, Issue 3, 217 (2005)
QUANTIFICATIONAL EXPLAINATION OF THE EFFECT OF BUFFER GAS ON OPTICALLY PUMPED SUBMILLIMETER WAVE LASER
[in Chinese], [in Chinese], [in Chinese], and [in Chinese]
The model of buffer gas effect on optically pumped submillimeter wave laser was established. And the deactivation rate of buffer gas was deduced by quantum theory, so that the buffer gas effect could be calculated quantificationally. The CO2-9(R30) laser pumping NH3 67.2um line was calculated theoretically and measuredThe model of buffer gas effect on optically pumped submillimeter wave laser was established. And the deactivation rate of buffer gas was deduced by quantum theory, so that the buffer gas effect could be calculated quantificationally. The CO2-9(R30) laser pumping NH3 67.2um line was calculated theoretically and measured experimentally. The experiment results agree with the theoretical calculation. This work would be in favor of finding high-efficient buffer gas of optically pumped submillimeter wave laser..
Journal of Infrared and Millimeter Waves
- Publication Date: Jun. 01, 2005
- Vol. 24, Issue 3, 221 (2005)
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