• Journal of Infrared and Millimeter Waves
  • Vol. 24, Issue 3, 161 (2005)
[in Chinese]
Author Affiliations
  • Dept. of Magnetotransport in Solids, Institute of Physics, Humboldt University, D-12489 Berlin, Germany
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    DOI: Cite this Article
    [in Chinese]. MEGAGAUSS SPECTRA OF SEMICONDUCTORS: MERCURYSELENIDE LOW-DIMENSIONAL STRUCTURES INMAGNETIC FIELDS UP TO 1000 T[J]. Journal of Infrared and Millimeter Waves, 2005, 24(3): 161 Copy Citation Text show less

    Abstract

    Mercuryselenide is a zero-gap semiconductor of Ⅱ-Ⅵ-family. The iron-doped modification HgSe:Fe has a “Fermi-level pinning” beyond the electron concentration of 5×10 18 cm -3 . Due to the short-range correlation of Fe ++ /Fe +++ -system, a dramatic increase of carrier mobility is observed, so that any quantum effect in 3D, 2D, 1D, and 0D is well detected. Applying molecular-beam epitaxy for the sample preparation, we present magnetospectral data of selected samples of this compound demonstrating various features in magnetic fields up to 1000 T by applying different field generators. The resulting data are explained in connection with suitable theoretical concepts basing on the k *p-method as well as on the tight-binding approximation.
    [in Chinese]. MEGAGAUSS SPECTRA OF SEMICONDUCTORS: MERCURYSELENIDE LOW-DIMENSIONAL STRUCTURES INMAGNETIC FIELDS UP TO 1000 T[J]. Journal of Infrared and Millimeter Waves, 2005, 24(3): 161
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