Irradiation of Sapphire Under Different Kr+-Ion Beam Parameters

Yuzhao Liu; Zhili Chen; Mangmang Fei; Yingxue Xi; Weiguo Liu

doi:10.3788/LOP56.121601

Journals >Laser & Optoelectronics Progress >Volume 56 >Issue 12 >Page 121601 > Article

Laser & Optoelectronics Progress
Vol. 56, Issue 12, 121601 (2019)

Irradiation of Sapphire Under Different Kr ⁺-Ion Beam Parameters

Yuzhao Liu, Zhili Chen^*, Mangmang Fei, Yingxue Xi, and Weiguo Liu

Author Affiliations

College of Information Science and Engineering, Xi'an Technological University, Xi'an, Shaanxi 710032, China

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DOI: 10.3788/LOP56.121601 Cite this Article Set citation alerts

Yuzhao Liu, Zhili Chen, Mangmang Fei, Yingxue Xi, Weiguo Liu. Irradiation of Sapphire Under Different Kr ⁺-Ion Beam Parameters [J]. Laser & Optoelectronics Progress, 2019, 56(12): 121601 Copy Citation Text

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Fig. 1. Roughness and etching rates under different factors. (a) Angle of incidence; (b) ion beam flux density; (c) ion energy; (d) etching time

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Fig. 2. AFM images of sapphire under different etching parameters

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Fig. 3. Sample surface morphologies. (a) Surface roughness; (b) etching rate

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Level	Angle ofincidence /(°)	Ion beamflux density /(μA·cm^-2)	Energy ofincidention /eV	Etchingtime /min
1	50	177	400	30
2	60	239	500	60
3	70	301	600	90

Table 1. Level-factor distribution

Number	Level				RMS ofroughness /nm	Etching rate /(nm·min^-1)
Number			Angle ofincidence	Ion beamflux density	Energy ofincident ion	Etchingtime
a	1	1	1	1	1.07	0.41
b	1	2	2	2	1.28	0.36
c	1	3	3	3	2.21	0.33
d	2	1	2	3	1.71	0.40
e	2	2	3	1	3.21	1.80
f	2	3	1	2	1.74	0.64
g	3	1	3	2	0.97	0.45
h	3	2	1	3	1.16	0.26
i	3	3	2	1	0.79	0.40

Table 2. Orthogonal test

Parameter(level)	Angle of incidence		Ion beam flux density		Energy of incident ion		Etching time
Parameter(level)	RMS ofroughness	Etchingrate	RMS ofroughness	Etchingrate	RMS ofroughness	Etchingrate	RMS ofroughness	Etchingrate
Mean(1)	1.52	0.37	1.25	0.42	1.32	0.44	1.69	0.87
Mean(2)	2.22	0.95	1.88	0.81	1.26	0.39	1.33	0.48
Mean(3)	0.97	0.37	1.58	0.46	1.58	0.86	1.70	0.33
Range R	1.25	0.58	0.63	0.39	0.87	0.47	0.37	0.54

Table 3. Range analysis of surface roughness and etching rate

Factor	Deviation		Degree		Mean square deviation		F value		Significant level
Factor	RMS ofroughness	Etchingrate	RMS ofroughness	Etchingrate	RMS ofroughness	Etchingrate	RMS ofroughness	Etchingrate	RMS ofroughness	Etchingrate
Angle	2.343	0.669	2	2	1.172	0.334	3.251	3.210	0.089	0.090
Fluxdensity	0.602	0.273	2	2	0.301	0.137	0.450	0.533	0.658	0.612
Energy	1.412	0.406	2	2	0.706	0.203	1.321	0.865	0.335	0.468
Time	0.262	0.465	2	2	0.131	0.232	0.180	1.034	0.839	0.411

Table 4. Variance analysis of surface roughness and etching rate

Yuzhao Liu, Zhili Chen, Mangmang Fei, Yingxue Xi, Weiguo Liu. Irradiation of Sapphire Under Different Kr ⁺-Ion Beam Parameters [J]. Laser & Optoelectronics Progress, 2019, 56(12): 121601

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