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Journals >Chinese Optics Letters >Volume 15 >Issue 8 >Page 081402 > Article

Chinese Optics Letters
Vol. 15, Issue 8, 081402 (2017)

Broad-area laser diodes with on-chip combined angled cavity

Zefeng Lu^1、2, Lijie Wang¹, Zhide Zhao³, Shili Shu¹, Guanyu Hou^1、2, Huanyu Lu^1、2, Sicong Tian¹, Cunzhu Tong^1、*, and Lijun Wang¹

Author Affiliations

¹State Key laboratory of Luminescence and Application, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

²University of Chinese Academy of Sciences, Beijing 100049, China

³Suzhou Everbright Photonics Co., Ltd, Suzhou 215000, China

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DOI: 10.3788/COL201715.081402 Cite this Article Set citation alerts

Zefeng Lu, Lijie Wang, Zhide Zhao, Shili Shu, Guanyu Hou, Huanyu Lu, Sicong Tian, Cunzhu Tong, Lijun Wang. Broad-area laser diodes with on-chip combined angled cavity[J]. Chinese Optics Letters, 2017, 15(8): 081402 Copy Citation Text

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Data from CrossRef

[1] Yudan Gou, Jun Wang, Yang Cheng, Yintao Guo, Xiao Xiao, Shouhuan Zhou. A Modeling and Experimental Study on the Growth of VCSEL Materials Using an 8 × 6 Inch Planetary MOCVD Reactor. Coatings, 10, 797(2020).

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Zefeng Lu, Lijie Wang, Zhide Zhao, Shili Shu, Guanyu Hou, Huanyu Lu, Sicong Tian, Cunzhu Tong, Lijun Wang. Broad-area laser diodes with on-chip combined angled cavity[J]. Chinese Optics Letters, 2017, 15(8): 081402

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