Broad-area laser diodes with on-chip combined angled cavity

Zefeng Lu; Lijie Wang; Zhide Zhao; Shili Shu; Guanyu Hou; Huanyu Lu; Sicong Tian; Cunzhu Tong; Lijun Wang

doi:10.3788/COL201715.081402

Journals >Chinese Optics Letters >Volume 15 >Issue 8 >Page 081402 > Article

Chinese Optics Letters
Vol. 15, Issue 8, 081402 (2017)

Broad-area laser diodes with on-chip combined angled cavity

Zefeng Lu^1、2, Lijie Wang¹, Zhide Zhao³, Shili Shu¹, Guanyu Hou^1、2, Huanyu Lu^1、2, Sicong Tian¹, Cunzhu Tong^1、*, and Lijun Wang¹

Author Affiliations

¹State Key laboratory of Luminescence and Application, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

²University of Chinese Academy of Sciences, Beijing 100049, China

³Suzhou Everbright Photonics Co., Ltd, Suzhou 215000, China

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DOI: 10.3788/COL201715.081402 Cite this Article Set citation alerts

Zefeng Lu, Lijie Wang, Zhide Zhao, Shili Shu, Guanyu Hou, Huanyu Lu, Sicong Tian, Cunzhu Tong, Lijun Wang. Broad-area laser diodes with on-chip combined angled cavity[J]. Chinese Optics Letters, 2017, 15(8): 081402 Copy Citation Text

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(a) Schematic diagram of the VAC, (b) the structure of the VAC laser, and (c) SEM image of the emitting facet showing the etching depth and the tilted angle of the ridge sidewall.

Fig. 1. (a) Schematic diagram of the VAC, (b) the structure of the VAC laser, and (c) SEM image of the emitting facet showing the etching depth and the tilted angle of the ridge sidewall.

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(Color online) L-I-V performance for on-chip combined angled cavity lasers with different included angles at room temperature under CW operation.

Fig. 2. (Color online) L-I-V performance for on-chip combined angled cavity lasers with different included angles at room temperature under CW operation.

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Fig. 3. (Color online) (a)–(f) Calculated resonator patterns and (g) facet reflectivity of different lateral modes in an angled cavity with optimal cavity length.

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Fig. 4. (Color online) Lateral FF angles as a function of injected current density for emission from (a) facet 1 and (c) facet 2, (b) and (d) are the corresponding lateral profiles at

2.1 kA / {cm}^{2}

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Fig. 5. (Color online) Lateral FF patterns of (a) VAC lasers with angle of 15° and cavity lengths of 1.5 and 1.4 mm, and (b) VAC lasers with angle of 10° and cavity lengths of 1.15 and 1.05 mm at

2.1 kA / {cm}^{2}

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Fig. 6. (Color online) Beam-waist diameter of VAC lasers and F-P lasers under the definition of

1 / e^{2}

width of normalized NF intensity as a function of injected current density.

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Fig. 7. Lasing spectra of VAC lasers for included angles of (a) 10° and (b) 15° at different injection levels.

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$(Color online) Lateral M2 factor of VAC and F-P lasers as a function of current density. Dashed line represents the diffraction limit.$

Fig. 8. (Color online) Lateral

M^{2}

factor of VAC and F-P lasers as a function of current density. Dashed line represents the diffraction limit.

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$(Color online) (a) Vertical FF profile of F-P and VAC lasers at 2.7 kA/cm2, where the dashed line represents the diffractive limit, (b) vertical FF angles of F-P and VAC lasers as a function of current density, and (c) the brightness of VAC lasers and F-P lasers as a function of current density.$

Fig. 9. (Color online) (a) Vertical FF profile of F-P and VAC lasers at

2.7 kA / {cm}^{2}

, where the dashed line represents the diffractive limit, (b) vertical FF angles of F-P and VAC lasers as a function of current density, and (c) the brightness of VAC lasers and F-P lasers as a function of current density.

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