Broad-area diode lasers usually supply high output power but low lateral beam quality. In this Letter, an on-chip combined angled cavity is proposed to realize narrow lateral far field patterns and high brightness. The influence of included angles, emitting facets on output power, and beam quality are investigated. It demonstrates that this V-junction laser is able to achieve a single-lobe far field at optimal cavity length with a 3.4 times improvement in brightness compared with Fabry–Perot (F-P) cavity lasers. The excited high-order modes at a high injection level reduce the brightness, but it is still 107% higher than that of F-P lasers.