Design of a General Equivalent Circuit for Fractional-Order Memory Element

SHANG Tao; GAN Zhaohui; YU Lei; ZUO Zihui

doi:10.13911/j.cnki.1004-3365.210349

Journals >Microelectronics >Volume 52 >Issue 3 >Page 399 > Article

Microelectronics
Vol. 52, Issue 3, 399 (2022)

Design of a General Equivalent Circuit for Fractional-Order Memory Element

SHANG Tao¹, GAN Zhaohui¹, YU Lei¹, and ZUO Zihui²

Author Affiliations

¹[in Chinese]

²[in Chinese]

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DOI: 10.13911/j.cnki.1004-3365.210349 Cite this Article

SHANG Tao, GAN Zhaohui, YU Lei, ZUO Zihui. Design of a General Equivalent Circuit for Fractional-Order Memory Element[J]. Microelectronics, 2022, 52(3): 399 Copy Citation Text

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References

[1] VENTRA M D, PERSHIN Y V, CHUA L O. Circuit elements with memory: memristors, memcapacitors, and meminductors ［J］. Proceed IEEE, 2009, 97(10): 1717-1724.

[4] YUAN F, WANG G Y, JIN P P, et al. Chaos in a meminductor-based circuit ［J］. Int J Bifurcation Chaos, 2016, 26(8): 1650130-1-1650130-14.

[5] PERSHIN Y V, VENTRA M D. Memristive circuits simulate memcapacitors and meminductors ［J］. Elec Lett, 2010, 46(7): 517-518.

[13] BRAGOS R, ROSELL J, RIU P. A wide-band AC-coupled current source for electrical impedance tomography ［J］. Physiological Measurement, 1994, (15): A91-A99.

SHANG Tao, GAN Zhaohui, YU Lei, ZUO Zihui. Design of a General Equivalent Circuit for Fractional-Order Memory Element[J]. Microelectronics, 2022, 52(3): 399

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