• Microelectronics
  • Vol. 52, Issue 3, 399 (2022)
SHANG Tao1, GAN Zhaohui1, YU Lei1, and ZUO Zihui2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.210349 Cite this Article
    SHANG Tao, GAN Zhaohui, YU Lei, ZUO Zihui. Design of a General Equivalent Circuit for Fractional-Order Memory Element[J]. Microelectronics, 2022, 52(3): 399 Copy Citation Text show less

    Abstract

    According to the conversion relationship between fractional-order memory elements, a general equivalent circuit of fractional-order memory elements was designed. Without changing the topological structure of circuit, the equivalent circuit could convert any grounding fractional-order memory element into any floating fractional-order memory element by selecting the types of five impedance elements. In the simulation experiment, three kinds of fractional-order memory elements were realized respectively according to the proposed general equivalent circuit, and the characteristics of three kinds of fractional-order memory element were analyzed. The correctness of the equivalent circuit was verified.
    SHANG Tao, GAN Zhaohui, YU Lei, ZUO Zihui. Design of a General Equivalent Circuit for Fractional-Order Memory Element[J]. Microelectronics, 2022, 52(3): 399
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