30 GHz GeSn photodetector on SOI substrate for 2 &#181;m wavelength application

Xiuli Li; Linzhi Peng; Zhi Liu; Zhiqi Zhou; Jun Zheng; Chunlai Xue; Yuhua Zuo; Baile Chen; Buwen Cheng

doi:10.1364/PRJ.413453

Journals >Photonics Research >Volume 9 >Issue 4 >Page 494 > Article

Photonics Research
Vol. 9, Issue 4, 494 (2021)

30 GHz GeSn photodetector on SOI substrate for 2 µm wavelength application

Xiuli Li^1、2, Linzhi Peng^1、2, Zhi Liu^1、2、*, Zhiqi Zhou³, Jun Zheng^1、2, Chunlai Xue^1、2, Yuhua Zuo^1、2, Baile Chen³, and Buwen Cheng^1、2、4

Author Affiliations

¹State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

³School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, China

⁴Beijing Academy of Quantum Information Sciences, Beijing 100193, China

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DOI: 10.1364/PRJ.413453 Cite this Article Set citation alerts

Xiuli Li, Linzhi Peng, Zhi Liu, Zhiqi Zhou, Jun Zheng, Chunlai Xue, Yuhua Zuo, Baile Chen, Buwen Cheng. 30 GHz GeSn photodetector on SOI substrate for 2 µm wavelength application[J]. Photonics Research, 2021, 9(4): 494 Copy Citation Text

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References

[10] W. Cao, D. Hagan, D. J. Thomson, M. Nedeljkovic, C. G. Littlejohns, A. Knights, S.-U. Alam, J. Wang, F. Gardes, W. Zhang, S. Liu, K. Li, M. S. Rouifed, G. Xin, W. Wang, H. Wang, G. T. Reed, G. Z. Mashanovich. High-speed silicon modulators for the 2 μm wavelength band. Optica, 5, 1055-1062(2018).