• Optical Instruments
  • Vol. 45, Issue 1, 80 (2023)
Yaru JIN and Jiaxin YU*
Author Affiliations
  • School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
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    DOI: 10.3969/j.issn.1005-5630.2023.001.012 Cite this Article
    Yaru JIN, Jiaxin YU. Fabrication of semiconductor field effect transistor based on a flexible stencil[J]. Optical Instruments, 2023, 45(1): 80 Copy Citation Text show less
    Geometric structure of stencil
    Fig. 1. Geometric structure of stencil
    Schematic diagram of process flow of the device fabrication
    Fig. 2. Schematic diagram of process flow of the device fabrication
    Schematic of CdSe nanobelts backgate field effect transistor
    Fig. 3. Schematic of CdSe nanobelts backgate field effect transistor
    Optical micrographs of channels with different sized stencil
    Fig. 4. Optical micrographs of channels with different sized stencil
    Optical micrographs of rigid shadow masked channels before and after metal deposition
    Fig. 5. Optical micrographs of rigid shadow masked channels before and after metal deposition
    Optical micrographs of stenciled channels before and after treatment and CdSe nanobelts and PL spectra of CdSe nanobelts
    Fig. 6. Optical micrographs of stenciled channels before and after treatment and CdSe nanobelts and PL spectra of CdSe nanobelts
    I-V characteristic curve of CdSe nanobelts backgate FET
    Fig. 7. I-V characteristic curve of CdSe nanobelts backgate FET
    图案位置d1/μm d2/μm d3/μm d4/μm r/μm
    ROW140200800400150
    ROW240200800400150
    ROW350200800400150
    ROW450200800400150
    Table 1. Parameters of the electrode pattern