Temperature dependence of the near-infrared photoluminescence spectroscopies in Ga0.5In0.5P epilayer grown on GaAs substrate by MOCVD method

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Acta Optica Sinica >Volume 12 >Issue 10 >Page 897 > Article

Acta Optica Sinica
Vol. 12, Issue 10, 897 (1992)

Temperature dependence of the near-infrared photoluminescence spectroscopies in Ga_0.5In_0.5P epilayer grown on GaAs substrate by MOCVD method

[in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]², [in Chinese]³, [in Chinese]³, and [in Chinese]³

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Temperature dependence of the near-infrared photoluminescence spectroscopies in Ga_0.5In_0.5P epilayer grown on GaAs substrate by MOCVD method[J]. Acta Optica Sinica, 1992, 12(10): 897 Copy Citation Text

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