Temperature dependence of the near-infrared photoluminescence spectroscopies in Ga0.5In0.5P epilayer grown on GaAs substrate by MOCVD method

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Acta Optica Sinica >Volume 12 >Issue 10 >Page 897 > Article

Acta Optica Sinica
Vol. 12, Issue 10, 897 (1992)

Temperature dependence of the near-infrared photoluminescence spectroscopies in Ga_0.5In_0.5P epilayer grown on GaAs substrate by MOCVD method

[in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]², [in Chinese]³, [in Chinese]³, and [in Chinese]³

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¹[in Chinese]

²[in Chinese]

³[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Temperature dependence of the near-infrared photoluminescence spectroscopies in Ga_0.5In_0.5P epilayer grown on GaAs substrate by MOCVD method[J]. Acta Optica Sinica, 1992, 12(10): 897 Copy Citation Text

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Abstract

The near-Infrared photoluminescence spectroscopies of Ga0.5In0.5P epilayer grown on GaAs substrate by metalorganic chemical vapor deposition (MOCVD) are measured. Three photoluminegcence peaks from deep levels are observed, and their peak energies are 1.17, 0.99 and 0.85eV, respectively. We further investigate the temperature dependence of the intensity, peak position and half width of the photoluminescence bands and discuss their origins.

Keywords

deep level Ga0.5In0.5P metalorganic chemical Vapor deposition near-infrared photoluminescence

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