[1] H Ohno, A Shen, F Matsukura et al. (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs. Appl Phys Lett, 69, 363(1996).

[2] T Dietl, H Ohno, F Matsukura et al. Zener model description in ferromagnetism in zinc-blende magnetic semiconductors. Sience, 287, 1019(2000).

[3] T Diet, H Ohno, F Matsukura. Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors. Phys Rev B, 63, 195205(2001).

[4]

[5] T Dietl, H Ohno. Dilute ferromagnetic semiconductors: Physics and spintronic structures. Rev Mod Phys, 86, 187(2014).

[6] T Jungwirth, J Wunderlich et al. Spin-dependent phenomena and device concepts explored in (Ga,Mn)As. Rev Mod Phys, 86, 855(2014).

[7] J Schneider, W Kaufmann et al. Electronic structure of neutral manganese acceptor in gallium arsenide. Phys Rev Lett, 59, 240(1987).

[8] J Szczytko, J Teardowski, K Świątek et al. Mn impurity in Ga_1–xMn_xAs epilayers. Phys Rev B, 60, 8304(1999).

[9] K M Yu, W Walukiewicz, T Wojtowicz et al. Effect of the location of Mn sites in ferromagnetic Ga_1–xMn_xAs on its Curie temperature. Phys Rev B, 65, 201303(2002).

[10] J Blinowski, P Kacman. Spin interactions of interstitial Mn ions in ferromagnetic GaMnAs. Phys Rev B, 67, 121204(R)(2003).

[11] T Wojtowicz, J K Furdyna, X Liu et al. Electronic effects determining the formation of ferromagnetic III_1–xMn_xV alloys during epitaxial growth. Physica E, 25, 171(2004).

[12] K W Edmonds, P Bogusławski, K Y Wang et al. Mn interstitial diffusion in (Ga,Mn)As. Phys Rev Lett, 92, 037201(2004).

[13] S Souma, L Chen, R Oszwałdowski. Fermi level position, Coulomb gap, and Dresselhaus splitting in (Ga,Mn)As. Sci Rep, 6, 27266(2016).

[14] K F Fid, B L Sheu, O Maksimov et al. Nanoengineered Curie temperature in laterally patterned ferromagnetic semiconductor heterostructures. Appl Phys Lett, 86, 152505(2005).

[15] L Chen, X Yan, F Yang et al. Enhancing the Curie temperature of ferromagnetic semiconductor (Ga,Mn)As to 200 K via nanostructure engineering. Nano Lett, 11, 2584(2011).

[16] A Shen, H Ohno, F Matsukura et al. Epitaxy of (Ga,Mn)As, a new diluted magnetic semiconductor based on GaAs. J Cryst Growth, 175/176, 1069(1997).

[17] T Jungwirth, Q Niu, A H MacDonald. Anomalous Hall effect in ferromagnetic semiconductors. Phys Rev Lett, 88, 207208(2002).

[18] D V Baxter, D Ruzmetov, J Scherschligt et al. Anisotropic magnetoresistance in Ga_1–xMn_xAs. Phys Rev B, 65, 212407(2002).

[19] H X Tang, R K Kawakami, D D Awschalom et al. Giant planar Hall effect in epitaxial (Ga,Mn)As devices. Phys Rev Lett, 90, 107201(2003).

[20] K Pappert, S Hümpfner, J Wenisch et al. Transport characterization of the magnetic anisotropy of (Ga,Mn)As. Appl Phys Lett, 90, 062109(2007).

[21] T Yamada, D Chiba, F Matsukura et al. Magnetic anisotropy in (Ga,Mn)As probed by magnetotransport measurements. Phys Status Solidi C, 3, 4086(2006).

[22] M Abolfath, T Jungwirth, J Brum et al. Theory of magnetic anisotropy in III_1–xMn_xV ferromagets. J Magn Magn Mater, 320, 1190(2008).

[23] M Birowska, C Śliwa, J A Majewski et al. Origin of bulk uniaxial anisotropy in zinc-blende dilute magnetic semiconductors. Phys Rev Lett, 108, 237203(2012).

[24] J Zemen, J Kučera, K Olejník et al. Magnetocrystalline anisotropies in (Ga,Mn)As: Systematic theoretical study and comparison with experiment. Phys Rev B, 80, 155203(2009).

[25] W Stefanowicz, C Śliwa, P Alekshkevych et al. Magnetic anisotropy of epitaxial (Ga,Mn)As on (113)A GaAs. Phys Rev B, 81, 155203(2010).

[26] M Sawicki, O Poselkov, C Sliwa et al. Cubic anisotropy in (Ga,Mn)As layers: Experiment and theory. Phys Rev B, 97, 184403(2018).

[27] A Oiwa, S Katsumoto, A Endo et al. Nonmetal-metal-nonmetal transition and large negative magnetoresistance in (Ga,Mn)As/GaAs. Solid State Commun, 103, 209(1997).

[28] T Dietl. Interplay between carrier localization and magnetism in diluted magnetic and ferromagnetic semiconductors. J Phys Soc Jpn, 77, 031005(2008).

[29] M Sawicki, D Chiba, A Korbecka. Experimental probing of the interplay between ferromagnetism and localization in (Ga,Mn)As. Nat Phys, 6, 22(2009).

[30] L Chen, F Matsukura. Electric-field modulation of damping constant in a ferromagnetic semiconductor (Ga,Mn)As. Phys Rev Lett, 115, 057204(2015).

[31] D Chiba, F Matsukura, H Ohno. Electric-field control of ferromagnetism in (Ga,Mn)As. Appl Phys Lett, 89, 162505(2006).

[32] D Chiba, M Sawicki, Y Nishitani et al. Magnetization vector manipulation by electric fields. Nature, 455, 515(2008).

[33] D Chiba, M Werpachowska et al. Anomalous Hall effect in field-effect structures of (Ga,Mn)As. Phys Rev Lett, 104, 106601(2010).

[34] F Matsukura, Y Tokura, H. Ohno. Control of magnetism by electric fields. Nat Nanotechnol, 10, 209(2015).

[35] X Liu, J K Furdyna. Ferromagnetic resonance in Ga_1–xMn_xAs dilute magnetic semiconductors. J Phys: Condens Matter, 18, R245(2006).

[36] T L Gilbert. A phenomenological theory of damping in ferromagnetic materials. IEEE Trans Magn, 40, 3443(2004).

[37] L Chen, F Matsukura, H Ohno. Direct-current voltages in (Ga,Mn)As structures induced by ferromagnetic resonance. Nat Commun, 4, 2055(2013).

[38] H Suhl. Ferromagnetic resonance in nickel ferrite between one and two kilomegacycles. Phys Rev, 97, 555(1955).

[39] S Mizukami, Y Ando. The study on ferromagnetic resonance linewidth for NM/80NiFe/NM (NM = Cu, Ta, Pd and Pt) films. Jpn J Appl Phys, 40, 580(2001).

[40] R Arias, D L Mills. Extrinsic contributions to the ferromagnetic resonance response of ultrathin films. Phys Rev B, 60, 7395(1999).

[41] J Lindner, C Barsukov et al. Two-magnon damping in thin films in case of canted magnetization: Theory versus experiment. Phys Rev B, 80, 224421(2009).

[42] A Okada, S Kanai, M Yamanouchi et al. Electric-field effects on magnetic anisotropy and damping constant in Ta/CoFeB/MgO investigated by ferromagnetic resonance. Appl Phys Lett, 105, 052415(2014).

[43] H J Juretschke. Electromagnetic theory of dc effects in ferromagnetic resonance. J Appl Phys, 31, 1401(1960).

[44] D Fang, H Kurebayashi, J Wunderlich et al. Spin-orbit-driven ferromagnetic resonance. Nat Nanotechnol, 6, 413(2011).

[45] S Mizukami, Y Ando, T Miyazaki. Effect of spin diffusion on Gilbert damping for a very thin permalloy layer in Cu/permalloy/ Cu/Pt films. Phys Rev B, 66, 104413(2002).

[46] Y Tserkovnyak, A Brataas, G E W Bauer. Enhanced Gilbert damping in thin ferromagnetic films. Phys Rev Lett, 88, 117601(2002).

[47] E Saitoh, M Ueda et al. Conversion of spin current into charge current at room temperature: Inverse spin-Hall effect. Appl Phys Lett, 88, 182509(2006).

[48] L Chen, S Ikeda, F Matsukura et al. DC voltages in Py and Py/Pt under ferromagnetic resonance. Appl Phys Express, 7, 013002(2014).

[49] H Nakayama, L Chen, H W Chang et al. Inverse spin Hall effect in Pt/(Ga,Mn)As. Appl Phys Lett, 106, 222405(2015).

[50] S Isogami, M Tsunoda. Enhanced inverse spin-Hall voltage in (001) oriented Fe₄N/Pt polycrystalline films without contribution of planar-Hall effect. Jpn J Appl Phys, 55, 043001(2016).

[51] A Chernyshov, M Overby, X Liu et al. Evidence for reversible control of magnetization in a ferromagnetic material by means of spin-orbit magnetic field. Nat Phys, 5, 656(2009).

[52] M Endo, F Matsukura, H Ohno. Current induced effective magnetic field and magnetization reversal in uniaxial anisotropy (Ga,Mn)As. Appl Phys Lett, 97, 222501(2010).

[53] J Moser, A Matos-Abiague, D Schuh et al. Tunneling anisotropic magnetoresistance and spin-orbit coupling in Fe/GaAs/Au tunnel junctions. Phys Rev Lett, 99, 056601(2007).

[54] M Gmitra, A Matos-Abiague, C Draxl et al. Magnetic control of spin-orbit fields: A first-principles study of Fe/GaAs junctions. Phys Rev Lett, 111, 036603(2013).

[55] I Žutić, J Fabian, Sarma S Das. Spintronics: Fundamentals and applications. Rev Mod Phys, 76, 323(2004).

[56] H J Zhu, M Ramsteiner, H Kostial et al. Room-temperature spin injection from Fe into GaAs. Phys Rev Lett, 87, 016601(2001).

[57] X Lou, C Adelmann, S A Crooker et al. Electrical detection of spin transport in lateral ferromagnet-semiconductor devices. Nat Phys, 3, 197(2007).

[58] L Chen, M Decker, M Kronseder et al. Robust spin-orbit torque and spin-galvanic effect at the Fe/GaAs(001) interface at room temperature. Nat Commun, 7, 13802(2016).

[59] J Fabian, A Matos-Abiague, C Ertler et al. Semiconductor spintronics. Acta Physics Slovaca, 57, 565(2007).

[60] J C R Sánchez, L Vila, G Desfonds et al. Spin-to-charge conversion using Rashba coupling at the interface between non-magnetic materials. Nat Commun, 4, 2944(2013).

[61] E Lesne, Y Fu, S Oyarzun et al. Highly efficient and tunable spin-to-charge conversion through Rashba coupling at oxide interfaces. Nat Mater, 15, 1261(2016).

[62] L Chen, M Gmitra, M Vogel et al. Electric-field control of interfacial spin-orbit fields. Nat Elect, 1, 350(2018).

[63] H Liu, W L Lim. Control of current-induced spin-orbit effects in a ferromagnetic heterostructure by electric field. Phys Rev B, 89, 220409(R)(2014).

[64] T Hupfauer, A Matos-Abiague, M Gmitra et al. Emergence of spin-orbit fields in magnetotransport of quasi-two-dimensional iron on gallium arsenide. Nat Commun, 6, 7374(2015).

[65] M Buchner, P Högl, S Putz et al. Anisotropic polar magneto-optic Kerr effect of ultrathin Fe/GaAs (001) layers due to interfacial spin-orbit interaction. Phys Rev Lett, 117, 157202(2016).

[66] L Chen, S Mankovsky, S Wimmer et al. Emergence of anisotropic Gilbert damping in ultrathin Fe layers on GaAs(001). Nat Phys, 14, 490(2018).